Multiple band direct conversion radio frequency transceiver integrated circuit

1. A multiple band direct conversion radio frequency (RF) transceiver integrated circuit (IC) comprises:

a multiple band direct conversion transmitter section including:

transmit baseband module coupled to receive an outbound baseband signal and to produce a processed outbound baseband signal; and

a multiple frequency band transmission module coupled to convert the processed outbound baseband signal into an outbound RF signal having a first RF carrier frequency within a first frequency band in accordance with a first band local oscillation when in a first mode and coupled to convert the processed outbound baseband signal into an outbound RF signal having a second RF carrier frequency within a second frequency band in accordance with a second band local oscillation when in a second mode;

a multiple band direct conversion receiver section including:

a multiple frequency band reception module coupled to convert an inbound RF signal having the first RF carrier frequency into an inbound baseband signal in accordance with the first band local oscillation when in the first mode and coupled to convert an inbound RF signal having the second RF carrier frequency into the inbound baseband signal into in accordance with the second band local oscillation when in the second mode; and

a receiver baseband module coupled to receive the inbound baseband signal and to produce a processed inbound baseband signal; and

a local oscillation generation module coupled to generate the first frequency band local oscillation when in the first mode and coupled to generate the second frequency band local oscillation when in the second mode.

2. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band transmission module comprises:

a first frequency band transmission module coupled to convert the processed outbound baseband signal into the outbound RF signal having the first RF carrier frequency in accordance with the first band local oscillation;

a second frequency band transmission module coupled to convert the processed outbound baseband signal into the outbound RF signal having the second RF carrier frequency in accordance with the second band local oscillation; and

a transmitter multiplexer coupled to provide the processed outbound baseband signal to the first frequency band transmission module when in the first mode and coupled to provide the processed outbound baseband signal to the first frequency band transmission module when in the second mode.

3. The multiple band direct conversion RF transceiver IC of claim 2 , wherein each of the first and second frequency band transmission modules comprises:

a mixing module coupled to mix the processed outbound baseband signal with the first or second band local oscillation to produce a mixed signal; and

a power amplifier driver module coupled to amplify the mixed signal to produce the outbound RF signal having the first or second RF carrier frequency.

4. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band reception module comprises:

a first frequency band reception module coupled to convert the inbound RF signal having the first RF carrier frequency into the inbound baseband signal in accordance with the first band local oscillation;

a second frequency band reception module coupled to convert the inbound RF signal having the second RF carrier frequency into the inbound baseband signal into in accordance with the second band local oscillation; and

a receiver multiplexer coupled to provide the inbound baseband signal from the first frequency band reception module to the receiver baseband module when in the first mode and coupled to provide the inbound baseband signal from the second frequency band reception module to the receiver baseband module when in the second mode.

5. The multiple band direct conversion RF transceiver IC of claim 4 , wherein each of the first and second frequency band reception modules comprises:

a low noise amplifier coupled to amplify the in the inbound RF signal having the first or second RF carrier frequency into an amplified inbound RF signal; and

a mixing module coupled to mix the amplified inbound RF signal with the first or second band local oscillation to produce the inbound baseband signal.

6. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band transmission module comprises:

a mixing module coupled to mix the processed outbound baseband signal with the first band local oscillation when in the first mode to produce first mixed signal and to mix the processed outbound baseband signal with the second band local oscillation when in the second mode to produce a second mixed signal;

first multiplexer coupled to provide the first or second band local oscillation to the mixing module in accordance with the multiple band direct conversion RF transceiver IC being in the first or second mode, respectively;

a first power amplifier driver module coupled to amplify the first mixed signal to provide the outbound RF signal having the first RF carrier frequency;

a second power amplifier driver module coupled to amplify the second mixed signal to provide the outbound RF signal having the second RF carrier frequency; and

a second multiplexer coupled to provide the first mixed signal to the first power amplifier driver module when in the first mode and to provide the second mixed signal to the second power amplifier driver module when in the second mode.

7. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band transmission module comprises:

a mixing module coupled to mix the processed outbound baseband signal with the first band local oscillation when in the first mode to produce first mixed signal and to mix the processed outbound baseband signal with the second band local oscillation when in the second mode to produce a second mixed signal;

first multiplexer coupled to provide the first or second band local oscillation to the mixing module in accordance with the multiple band direct conversion RF transceiver IC being in the first or second mode, respectively; and

an adjustable power amplifier driver module coupled to amplify the first mixed signal to provide the outbound RF signal having the RF carrier frequency within the first frequency band when in the first mode and coupled to amplify the second mixed signal to provide the outbound RF signal having the RF carrier frequency within the second frequency band when in the second mode.

8. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band reception module comprises:

a first low noise amplifier coupled to amplify the inbound RF signal having the first RF carrier frequency to produce a first amplified inbound RF signal;

a second low noise amplifier coupled to amplify the inbound RF signal having the second RF carrier frequency to produce a second amplified inbound RF signal;

a mixing module;

a first multiplexer coupled to provide the first amplified inbound RF signal to the mixing module when in the first mode and to provide the second amplified inbound RF signal to the mixing module when in the second mode; and

a second multiplexer coupled to provide the first band local oscillation to the mixing module when in the first mode and to provide the second band local oscillation to the mixing module when in the second mode, wherein the mixing module mixes the first band local oscillation and the first amplified inbound RF signal or mixes the second band local oscillation and the second amplified inbound RF signal to produce the inbound baseband signal.

9. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the multiple frequency band reception module comprises:

an adjustable low noise amplifier coupled to amplify the inbound RF signal having the first RF carrier frequency to produce a first amplified inbound RF signal and coupled to amplify the inbound RF signal having the second RF carrier frequency to produce a second amplified inbound RF signal;

a mixing module; and

a multiplexer coupled to provide the first band local oscillation to the mixing module when in the first mode and to provide the second band local oscillation to the mixing module when in the second mode, wherein the mixing module mixes the first band local oscillation and the first amplified inbound RF signal or mixes the second band local oscillation and the second amplified inbound RF signal to produce the inbound baseband signal.

10. The multiple band direct conversion RF transceiver IC of claim 1 , wherein the receiver baseband module comprises:

a first variable gain amplifier module coupled to amplify the inbound baseband signal in accordance with a first gain setting to produce amplified inbound baseband signal;

a low pass filter module coupled to low pass filter the amplified inbound baseband signal to produce filtered inbound baseband signal;

a second variable gain amplifier module coupled to amplify the filtered inbound baseband signal in accordance with a second gain setting to produce second amplified baseband signal; and

a driver module coupled to drive the second amplified baseband signal to produce the processed inbound baseband signal.

11. A multiple band direct conversion radio frequency (RF) transmitter integrated circuit (IC) comprises:

a transmit baseband module coupled to receive an outbound in-phase baseband signal component and an outbound quadrature baseband signal component of an outbound baseband signal and to produce a processed outbound in-phase baseband signal component and a processed quadrature baseband signal component;

a multiple frequency band transmission module coupled to convert the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component into an outbound RF signal having a first RF carrier frequency within a first frequency band in accordance with a first band local oscillation when in a first mode and coupled to convert the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component into an outbound RF signal having a second RF carrier frequency within a second frequency band in accordance with a second band local oscillation when in a second mode; and

a local oscillation generation module coupled to generate the first frequency band local oscillation when in the first mode and coupled to generate the second frequency band local oscillation when in the second mode.

12. The multiple band direct conversion RF transmitter IC of claim 11 , wherein the multiple frequency band transmission module comprises:

a first frequency band transmission module coupled to convert the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component into the outbound RF signal having the first RF carrier frequency in accordance with the first band local oscillation;

a second frequency band transmission module coupled to convert the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component into the outbound RF signal having the second RF carrier frequency in accordance with the second band local oscillation; and

a transmitter multiplexer coupled to provide the processed in-phase signal component and the processed quadrature signal component to the first frequency band transmission module when in the first mode and coupled to provide the processed in-phase signal component and the processed quadrature signal component to the first frequency band transmission module when in the second mode.

13. The multiple band direct conversion RF transmitter IC of claim 12 , wherein each of the first and second frequency band transmission modules comprises:

a mixing module coupled to mix the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component with the first or second band local oscillation to produce a mixed signal; and

a power amplifier driver module coupled to amplify the mixed signal to produce the outbound RF signal having the first or second RF carrier frequency.

14. The multiple band direct conversion RF transmitter IC of claim 11 , wherein the multiple frequency band transmission module comprises:

a mixing module coupled to mix the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component with the first band local oscillation when in the first mode to produce first mixed in-phase and quadrature signal components and to mix the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component with the second band local oscillation when in the second mode to produce second mixed in-phase and quadrature signal components;

first multiplexer coupled to provide the first or second band local oscillation to the mixing module in accordance with the multiple band direct conversion RF transmitter IC being in the first or second mode, respectively;

a first power amplifier driver module coupled to amplify the first mixed in-phase and quadrature signal components to provide the outbound RF signal having the first RF carrier frequency;

a second power amplifier driver module coupled to amplify the second mixed in-phase and quadrature signal components to provide the outbound RF signal having the second RF carrier frequency; and

a second multiplexer coupled to provide the first mixed in-phase and quadrature signal components to the first power amplifier driver module when in the first mode and to provide the second mixed in-phase and quadrature signal components to the second power amplifier driver module when in the second first mode.

15. The multiple band direct conversion RF transmitter of claim 11 , wherein the multiple frequency band transmission module comprises:

a mixing module coupled to mix the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component with the first band local oscillation when in the first mode to produce first mixed in-phase and quadrature signal components and to mix the processed outbound in-phase baseband signal component and the processed quadrature baseband signal component with the second band local oscillation when in the second mode to produce second mixed in-phase and quadrature signal components;

first multiplexer coupled to provide the first or second band local oscillation to the mixing module in accordance with the multiple band direct conversion RF transmitter IC being in the first or second mode, respectively; and

an adjustable power amplifier driver module coupled to amplify the first mixed in-phase and quadrature signal components to provide the outbound RF signal having the first RF carrier frequency when in the first mode and coupled to amplify the second mixed in-phase and quadrature signal components to provide the outbound RF signal having the second RF carrier frequency when in the second mode.

16. A multiple band direct conversion radio frequency (RF) receiver integrated circuit (IC) comprises:

a multiple frequency band reception module coupled to convert an inbound RF signal having a first RF carrier frequency within a first frequency band into an inbound in-phase baseband signal component and an inbound quadrature baseband signal component in accordance with a first band local oscillation when in a first mode and coupled to convert an inbound RF signal having a second RF carrier frequency within a second frequency band into an inbound in-phase baseband signal component and the inbound quadrature baseband signal component into in accordance with the second band local oscillation when in a second mode;

a receiver baseband module coupled to receive the inbound in-phase baseband signal component and the inbound quadrature baseband signal component and to produce a processed inbound in-phase baseband signal component and a processed inbound quadrature baseband signal component; and

a local oscillation generation module coupled to generate the first frequency band local oscillation when in the first mode and coupled to generate the second frequency band local oscillation when in the second mode.

17. The multiple band direct conversion RF receiver IC of claim 16 , wherein the multiple frequency band reception module comprises:

a first frequency band reception module coupled to convert the inbound RF signal having the first RF carrier frequency into the inbound in-phase baseband signal component and the inbound quadrature baseband signal component in accordance with the first band local oscillation; and

a second frequency band reception module coupled to convert the inbound RF signal having the second RF carrier frequency into the inbound in-phase baseband signal component and the inbound quadrature baseband signal component into in accordance with the second band local oscillation; and a receiver multiplexer coupled to provide the inbound in-phase baseband signal component and the inbound quadrature baseband signal component from the first frequency band reception module to the receiver baseband module when in the first mode and coupled to provide the inbound in-phase baseband signal component and the inbound quadrature baseband signal component from the second frequency band reception module to the receiver baseband module when in the second mode.

18. The multiple band direct conversion RF receiver IC of claim 17 , wherein each of the first and second frequency band reception modules comprises:

a low noise amplifier coupled to amplify the in the inbound RF signal having the first or second RF carrier frequency into an amplified inbound RF signal; and

a mixing module coupled to mix the amplified inbound RF signal with the first or second band local oscillation to produce the inbound in-phase baseband signal component and the inbound quadrature baseband signal component.

19. The multiple band direct conversion RF receiver IC of claim 16 , wherein the multiple frequency band reception module comprises:

a first low noise amplifier coupled to amplify the inbound RF signal having the first RF carrier frequency to produce a first amplified inbound RF signal;

a second low noise amplifier coupled to amplify the inbound RF signal having the second RF carrier frequency to produce a second amplified inbound RF signal;

a mixing module;

a first multiplexer coupled to provide the first amplified inbound RF signal to the mixing module when in the first mode and to provide the second amplified inbound RF signal to the mixing module when in the second mode; and

a second multiplexer coupled to provide the first band local oscillation to the mixing module when in the first mode and to provide the second band local oscillation to the mixing module when in the second mode, wherein the mixing module mixes the first band local oscillation and the first amplified inbound RF signal or mixes the second band local oscillation and the second amplified inbound RF signal to produce the inbound in-phase baseband signal component and the inbound quadrature baseband signal component.

20. The multiple band direct conversion RF receiver IC of claim 16 , wherein the multiple frequency band reception module comprises:

an adjustable low noise amplifier coupled to amplify the inbound RF signal having the first RF carrier frequency to produce a first amplified inbound RF signal and coupled to amplify the inbound RF signal having the second RF carrier frequency to produce a second amplified inbound RF signal;

a mixing module; and

a multiplexer coupled to provide the first band local oscillation to the mixing module when in the first mode and to provide the second band local oscillation to the mixing module when in the second mode, wherein the mixing module mixes the first band local oscillation and the first amplified inbound RF signal or mixes the second band local oscillation and the second amplified inbound RF signal to produce the inbound in-phase baseband signal component and the inbound quadrature baseband signal component.