IP Library › Patent Application 12862336
Patent Application
App. No. 12/862,336

HETERO-JUNCTION BIPOLAR TRANSISTOR

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Quick Facts
Patent No.
US None
App. No.
12/862,336
Abstract

A hetero-junction bipolar transistor includes a sub-collector layer formed on a substrate and having conductivity, a first collector layer formed on the sub-collector layer and a second collector layer formed on the first collector layer and having the same conductive type as a conductive type of the sub-collector layer. In the first collector layer, a delta-doped layer is provided.

Claims (13)

1 - 6 . (canceled)

7 . A hetero junction bipolar transistor comprising:

a sub-collector layer formed on a substrate and having conductivity;

a first collector layer formed on the sub-collector layer;

a second collector layer formed on the first collector layer and having the same conductive type as a conductive type of the sub-collector layer; and

a spacer layer formed between the first collector layer and the second collector layer and having the same conductive type as the conductive type of the sub-collector layer.

8 . The hetero junction bipolar transistor of claim 7 , wherein the first collector layer contains InGaP,

wherein the second collector layer contains GaAs,

wherein the spacer layer contains GaAs, and

wherein the spacer layer has a higher concentration than a concentration of the second collector layer.

9 . The hetero junction bipolar transistor of claim 8 , wherein the spacer layer has a thickness of 10 nm or less, and

wherein the spacer layer has a concentration of 1×10 18 cm −3 or more and 2×10 18 cm −3 or less.

10 . (canceled)