Method for producing an electronic component and electronic component
View Patent ↗A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate ( 1 ) with at least one functional layer ( 22 ), applying at least one first barrier layer ( 3 ) on the functional layer ( 22 ) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer ( 4 ) on the functional layer ( 22 ) by means of plasma-enhanced chemical vapor deposition (PECVD).
1. A method for producing an electronic component comprising barrier layers for the encapsulation of the component, comprising the steps of:
providing a substrate with at least one functional layer;
applying at least one first barrier layer on the at least one functional layer by plasmaless atomic layer deposition;
applying at least one second barrier layer on the at least one functional layer by plasma-enhanced chemical vapor deposition;
applying a protective layer on the at least one first barrier layer and the at least one second barrier layer, wherein the protective layer includes a plastic and has a thickness of greater than or equal to 10 μm; and
obtaining a layer sequence composed of at least two layers comprising different materials and applying said layer sequence as the at least one second barrier layer.
2. The method of claim 1 , wherein the protective layer has a spray coating.
3. The method of claim 1 , wherein:
in the course of providing the substrate with the at least one functional layer, a first electrode is applied on the substrate and a second electrode is applied on the at least one functional layer;
the at least one functional layer comprises an organic functional layer; and
the at least one first barrier layer is applied on the second electrode.
4. The method of claim 1 , wherein the at least one first barrier layer and/or the at least one second barrier layer comprises an oxide, a nitride or an oxynitride.
5. The method of claim 1 , wherein the at least two layers comprising different materials of the layer sequence comprise a layer comprising an oxide and a layer comprising a nitride.
6. The method of claim 1 , wherein at least one further first barrier layer and/or at least one further second barrier layer is applied on the at least one functional layer.
7. The method of claim 5 , wherein the at least one first barrier layer and the at least one second barrier layer are applied alternately one on top of another.
8. The method of claim 1 , wherein the at least one second barrier layer is applied before the at least one first barrier layer.
9. The method of claim 1 , wherein the at least one first barrier layer and the at least one second barrier layer are applied at a substrate temperature of greater than or equal to 60° C. and less than or equal to 120° C.
10. The method of claim 1 , wherein the at least one first barrier layer has a thickness of greater than or equal to 10 nm and less than or equal to 30 nm.
11. The method of claim 1 , wherein the at least one second barrier layer has a thickness of greater than or equal to 100 nm and less than or equal to 1000 nm.
12. The method of claim 1 , wherein the electronic component comprises an organic light emitting diode and/or a solar cell.