Optical-electronic component and method for production thereof

1. An optoelectronic component comprising:

a first semiconductor layer stack, which has an active layer designed for the emission of radiation and a main area;

a separating layer, which is arranged on the main area of the first semiconductor layer stack, wherein the separating layer forms a semitransparent mirror;

a second semiconductor layer stack, which is arranged at the separating layer and which has a further active layer designed for the emission of radiation and a main area;

a first contact element of the first semiconductor layer stack arranged on a further main area of the first semiconductor layer stack, wherein the further main area lies opposite the main area; and

a second contact element of the first semiconductor layer stack on an again further main area of the first semiconductor layer stack, wherein the again further main area is arranged between the main area and the further main area, wherein the first contact element and the second contact element provide an electrical contact of the active layer of the first semiconductor layer stack.

2. The optoelectronic component as claimed in claim 1 , wherein the emittable radiation of the active layer of the first semiconductor layer stack couples into the second semiconductor layer stack and the emittable radiation of the active layer of the first semiconductor layer stack and the emittable radiation of the active layer of the second semiconductor layer stack are emittable from the main area of the second semiconductor layer stack.

3. The optoelectronic component as claimed in claim 1 , wherein the active layer of the first semiconductor layer stack is designed to emit radiation of a first wavelength range, and the active layer of the second semiconductor layer stack is designed to emit radiation of a second wavelength range.

4. The optoelectronic component as claimed in claim 3 , wherein the separating layer is transparent to radiation of the first wavelength range and is embodied for reflecting radiation of the second wavelength range.

5. The optoelectronic component as claimed in claim 1 , wherein the separating layer comprises at least two layers, wherein the layers have at least two different refractive indices.

6. The optoelectronic component as claimed in claim 1 , wherein the separating layer comprises an electrically conducting material.

7. The optoelectronic component as claimed in claim 1 , wherein the separating layer comprises a dielectric.

8. The optoelectronic component as claimed in claim 1 , wherein the separating layer has a structuring.

9. The optoelectronic component as claimed in claim 7 , wherein the separating layer comprises at least one cutout into which an electrically conducting material is introduced.

10. The optoelectronic component as claimed in claim 1 , further comprising:

a first contact element arranged at the second semiconductor layer stack, and

a second contact element arranged at the second semiconductor layer stack, wherein the first contact element and the second contact element provide an electrical contact of the active layer of the second semiconductor layer stack.

11. The optoelectronic component as claimed in claim 1 , wherein the different semiconductor layer stacks are in each case individually drivable.

12. The optoelectronic component as claimed in claim 1 , further comprising: a converter substance for the partial wavelength conversion of radiation, wherein the converter substance is arranged at the main area of the second semiconductor layer stack.

13. A method for producing an optoelectronic component, comprising:

providing a first substrate;

producing a first semiconductor layer stack having an active layer designed for the emission of radiation on the first substrate;

stripping away the substrate from the first semiconductor layer stack;

providing a second substrate;

producing a second semiconductor layer stack having an active layer suitable for the emission of radiation on the second substrate;

stripping away the second substrate from the second semiconductor layer stack;

applying a separating layer, which forms a semitransparent mirror, on at least one of the semiconductor layer stacks;

applying the second semiconductor layer stack to the first semiconductor layer stack, such that the separating layer is arranged between the first and the second semiconductor layer stacks;

forming a first contact element of the first semiconductor layer stack arranged on a further main area of the first semiconductor layer stack, wherein the further main area lies opposite the main area; and

forming a second contact element of the first semiconductor layer stack on an again further main area of the first semiconductor layer stack, wherein the again further main area is arranged between the main area and the further main area, wherein the first contact element and the second contact element provide an electrical contact of the active layer of the first semiconductor layer stack.

14. The method as claimed in claim 13 , comprising:

forming at least one cutout of the separating layer; and

filling the cutout of the separating layer with an electrically conducting material.