Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor
View Patent ↗Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove.
1. A method of forming an organic semiconductor layer comprising the steps of:
preparing a substrate having a groove on one side thereof, wherein the groove is provided such that it intersects a circumference of a region to which a droplet including an organic semiconductor material is to be applied and that the droplet after having been applied outflows and extends along the groove from the region and initiates crystallization at a tip of the extended droplet;
applying the droplet to the region; and
drying the droplet to form the organic semiconductor layer.
2. The method of claim 1 , wherein the droplet is formed by an organic semiconductor liquid prepared by dissolving the organic semiconductor material in a solvent.
3. The method of claim 1 , wherein the droplet is formed by an organic semiconductor liquid prepared by dispersing the organic semiconductor material in a dispersion medium.
4. The method of claim 1 , wherein a configuration of the groove is 5 nm to 50 nm in depth in a direction of a thickness of the substrate and 450 nm to 1200 nm in width on the surface of the substrate to which the droplet is applied.
5. A method of forming an organic semiconductor layer comprising the steps of:
preparing a substrate on which a gate electrode and a gate insulating layer are formed, the gate insulation layer having a groove on it, wherein the groove is provided such that it intersects a circumference of a region to which a droplet including an organic semiconductor material is to be applied and that the droplet after having been applied outflows and extends along the groove from the region and initiates crystallization at a tip of the extended droplet;
applying the droplet to the region; and
drying the droplet to form the organic semiconductor layer.
6. The method of claim 5 , wherein the droplet is formed by an organic semiconductor liquid prepared by dissolving the organic semiconductor material in a solvent.
7. The method of claim 5 , wherein the droplet is formed by an organic semiconductor liquid prepared by dispersing the organic semiconductor material in a dispersion medium.
8. The method of claim 5 , wherein a configuration of the groove is 5 nm to 50 nm in depth in a direction of a thickness of the gate insulation layer and 450 nm to 1200 nm in width on the surface of the gate insulation layer to which the droplet is applied.
9. A method of manufacturing an organic thin film transistor including a substrate, a gate electrode, a source electrode, a drain electrode, and a gate insulation layer existing between the gate electrode and the source and the drain electrodes, the method comprising the steps of:
applying a droplet including an organic semiconductor material to a region so that the droplet contacts the source electrode and the drain electrode; and
drying the droplet to form an organic semiconductor layer,
wherein, before the droplet is applied, a groove is provided such that it intersects a circumference of the region to which the droplet including the organic semiconductor material is to be applied and that the droplet after having been applied outflows and extends along the groove from the region and initiates crystallization at a tip of the extended droplet.
10. A method of manufacturing an organic thin film transistor comprising the steps of:
preparing a substrate;
forming a gate electrode on the substrate;
forming a gate insulation layer on the gate electrode;
forming a groove, a source electrode and a drain electrode on the gate insulation layer, wherein said groove is formed such that it intersects a circumference of a region to which a droplet including an organic semiconductor material is to be applied and that the droplet after having been applied outflows and extends along the groove from the region and initiates crystallization at a tip of the extended droplet;
applying the droplet to the region so that the droplet contacts the source electrode and the drain electrode; and
drying the droplet to form an organic semiconductor layer.
11. The method of claim 10 , wherein the droplet is formed by an organic semiconductor liquid prepared by dissolving the organic semiconductor material in a solvent.
12. The method of claim 10 , wherein the droplet is formed by an organic semiconductor liquid prepared by dispersing the organic semiconductor material in a dispersion medium.
13. The method of claim 10 , wherein a configuration of the groove is 5 nm to 50 nm in depth in a direction of a thickness of the gate insulation layer and 450 nm to 1200 nm in width on the surface of the gate insulation layer to which the droplet is applied.