Organic light-emitting diode, contact arrangement and method for producing an organic light-emitting diode

1. An organic light-emitting diode comprising:

a layer stack having at least one organic layer for emitting electromagnetic radiation, the layer stack having a first surface and a second surface opposite the first surface;

an electrically conductive first connection layer, which is arranged on the first surface of the layer stack and connected electrically therewith; and

an electrically conductive second connection layer which is at least predominantly transparent to a characteristic wavelength of the emittable electromagnetic radiation, which second connection layer is arranged on the second surface of the layer stack and connected electrically therewith,

wherein a conductive contact structure insulated electrically from the first connection layer is arranged on the opposite side of said first connection layer from the layer stack,

wherein the first connection layer comprises a plurality of openings,

wherein the second connection layer is connected electrically to the contact structure through the region of the plurality of openings in the first connection layer,

wherein the contact structure comprises at least a first insulating layer and an electrically conductive third connection layer, the first insulating layer being in direct physical contact with the side of the first connection layer remote from the layer stack and the third connection layer being in direct physical contact with the side of the first insulating layer remote from the first connection layer,

wherein the first insulating layer is formed as an electrically insulating carrier substrate and comprises a plurality of openings, which are associated with the plurality of openings in the first connection layer,

wherein the second connection layer covers the at least one organic layer, the plurality of openings of the first connection layer and the plurality of openings of the carrier substrate,

wherein the electromagnetic radiation exits from the organic-light emitting diode through the second connection layer,

wherein a plurality of contact elements is arranged in the layer stack,

wherein each one of the plurality of contact elements is surrounded by an insulation layer such that the respective contact element is insulated electrically from the layer stack,

wherein the insulation layer directly adjoins the organic layer, the first connection layer and the electrically insulating carrier substrate formed by the first insulating layer, and

wherein the insulation layer directly adjoins the first insulating layer at a boundary surface between the insulation layer and the first insulating layer.

2. The organic light-emitting diode according to claim 1 , wherein the layer stack in each case comprises one recess in the region of the plurality of openings in the first connection layer and the second connection layer projects into these recesses, in order to contact the contact structure electrically.

3. The organic light-emitting diode according to claim 1 , wherein the plurality of contact elements is associated with the plurality of openings in the first connection layer and connects the second connection layer electrically with the contact structure.

4. The organic light-emitting diode according to claim 3 , wherein the plurality of contact elements are strip-shaped or cross-shaped.

5. The organic light-emitting diode according to claim 3 , wherein the plurality of contact elements are electrically conductive and non-metallic, and wherein carbon nanotubes are formed in the layer stack.

6. The organic light-emitting diode according to claim 1 , wherein the second connection layer comprises a doped transition metal oxide.

7. The organic light-emitting diode according to claim 6 , wherein the second connection layer comprises an indium-tin oxide or aluminium-doped zinc oxide.

8. The organic light-emitting diode according to claim 1 , wherein the second connection layer comprises at least one thin metallic layer with a thickness of between 5 and 50 nm.

9. The organic light-emitting diode according to claim 8 , wherein the second connection layer additionally comprises at least one doped transition metal oxide layer, the thin metallic layer and the transition metal oxide layer forming a composite structure.

10. The organic light-emitting diode according to claim 8 , wherein the second connection layer comprises at least one thin metallic layer with a thickness of less than 30 nm.

11. An organic light-emitting diode comprising:

a layer stack having at least one organic layer for emitting electromagnetic radiation, the layer stack having a first surface and a second surface opposite the first surface;

an electrically conductive first connection layer, which is arranged on the first surface of the layer stack and connected electrically therewith; and

an electrically conductive second connection layer which is at least predominantly transparent to a characteristic wavelength of the emittable electromagnetic radiation, which second connection layer is arranged on the second surface of the layer stack and connected electrically therewith,

wherein a conductive contact structure insulated electrically from the first connection layer is arranged on the opposite side of said first connection layer from the layer stack,

wherein the first connection layer comprises a plurality of openings,

wherein the second connection layer is connected electrically to the contact structure in the region of the plurality of openings in the first connection layer,

wherein the contact structure comprises at least a first insulating layer and an electrically conductive third connection layer, the first insulating layer being in direct physical contact with the side of the first connection layer remote from the layer stack and the third connection layer being in direct physical contact with the side of the first insulating layer remote from the first connection layer,

wherein electrical connections between the second connection layer and the third connection layer are formed by contact elements, said contact elements being metal pins which are introduced into the layer stack.