Lithographic apparatus and device manufacturing method involving a heater and a temperature sensor
A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and a heater.
1. A lithographic apparatus, comprising:
a substrate table constructed to hold a substrate;
a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with liquid;
a substrate temperature conditioning system configured to provide heat transfer to or from at least a portion of the substrate;
a temperature sensor configured to determine a temperature;
a substrate temperature control system configured to provide a control signal to control the substrate temperature conditioning system based on the determined temperature; and
a parameter control system configured to adjust a lithographic apparatus parameter, that is other than, or in addition to, the control signal and a temperature of the liquid as being supplied to the space by the liquid supply system, based on temperature information of the substrate and/or substrate table or on a measure derived from the temperature information.
2. The apparatus according to claim 1 , wherein:
the temperature sensor is configured to measure the temperature of at least a portion of the substrate, or of at least a portion of the substrate table or any combination thereof; and
the substrate temperature control system is configured to control the output of the substrate temperature conditioning system so as to reduce a difference between the temperature measured by the temperature sensor and a target temperature.
3. The apparatus according to claim 1 , wherein the parameter control system comprises a thermally-induced distortion calculator configured to determine a thermally-induced distortion profile of the substrate and a distortion controller configured to adjust the lithographic apparatus parameter based on the thermally-induced distortion profile of the substrate.
4. The apparatus according to claim 3 , wherein the distortion controller is configured to adjust the patterned beam of radiation.
5. The apparatus according to claim 1 , wherein the lithographic apparatus parameter comprises a positional offset and the parameter control system is configured to provide the positional offset based on the temperature information or on the measure derived from the temperature information.
6. The apparatus according to claim 1 , wherein the lithographic apparatus parameter comprises a parameter of the patterned radiation beam and the parameter control system is configured to adjust the parameter of the patterned radiation beam based on the temperature information or on the measure derived from the temperature information.
7. The apparatus according to claim 1 , further comprising a barrier member arranged to at least partially contain the liquid within the space between the projection system and the substrate.
8. The apparatus according to claim 7 , wherein the temperature sensor is in or on the barrier member.
9. The apparatus according to claim 8 , further comprising a temperature sensor in or on the substrate table.
10. The apparatus according to claim 7 , wherein the barrier member comprises an aperture through which the patterned beam is projected and an outlet, in a bottom surface of the barrier member and having portions on opposite sides of the aperture, configured to remove the liquid from the space, wherein the distance between the portions is smaller than the width of the substrate.
11. The apparatus according to claim 1 , wherein the temperature information comprises a temperature profile of the substrate.
12. The apparatus according to claim 1 , wherein the substrate temperature conditioning system comprises a substrate heater configured to heat at least a portion of the substrate, the substrate heater comprising a plurality of heaters.
13. The apparatus according to claim 12 , wherein the heaters extend substantially parallel to each other.
14. The apparatus according to claim 12 , wherein the plurality of heaters comprise a plurality of electric heaters.
15. The apparatus according to claim 14 , wherein the electric heaters comprise an electrically conductive layer at or on the top surface of the substrate table.
16. The apparatus according to claim 12 , wherein the substrate temperature control system comprises a plurality of substrate temperature controllers, each substrate temperature controller configured to control a respective heater of the plurality of heaters and cause the respective heater of the plurality of heaters to have or apply a different temperature than another heater of the plurality of heaters.
17. The apparatus according to claim 12 , wherein the substrate temperature control system is further configured to provide the control signal to cause a heater of the plurality of heaters to have or apply a different temperature than another heater of the plurality of heaters.
18. A device manufacturing method, comprising:
at least partly filling a space between a projection system of a lithographic apparatus and a substrate table with a liquid;
projecting a patterned radiation beam, using the projection system, through the liquid onto a target portion of the substrate supported by a substrate table;
determining a temperature using a temperature sensor;
providing heat transfer to or from at least a portion of the substrate using a substrate temperature conditioning system;
controlling the substrate temperature conditioning system based on the measured temperature; and
adjusting a lithographic apparatus parameter, that is other than, or in addition to, a control signal used to control the substrate conditioning system and a temperature of the liquid as being supplied to the space, based on temperature information of the substrate and/or substrate table or on a measure derived from the temperature information.
19. The method according to claim 18 , wherein determining the temperature comprises measuring the temperature of at least a portion of the substrate, or of at least a portion of the substrate table or any combination thereof, using the temperature sensor, and controlling the substrate temperature conditioning system so as to reduce a difference between the temperature measured by the temperature sensor and a target temperature.
20. The method according to claim 18 , wherein adjusting the lithographic apparatus parameter comprises determining a thermally-induced distortion profile of the substrate and adjusting the lithographic apparatus parameter based on the thermally-induced distortion profile of the substrate.
21. The method according to claim 20 , wherein adjusting the parameter comprises adjusting the patterned beam of radiation.
22. The method according to claim 18 , further comprising at least partially containing the liquid within the space between the projection system and the substrate table using a barrier member.
23. The method according to claim 22 , wherein the temperature sensor is in or on the barrier member.
24. The method according to claim 23 , further comprising determining a temperature using a temperature sensor in or on the substrate table.
25. The method according to claim 18 , wherein providing the heat transfer comprises heating at least a portion of the substrate using a plurality of heaters.
26. The method according to claim 25 , wherein the heaters extend substantially parallel to each other.
27. The method according to claim 25 , wherein controlling the substrate temperature conditioning system further comprises causing a heater of the plurality of heaters to have or apply a different temperature or to have a different heating power, than another heater of the plurality of heaters.
28. The method according to claim 18 , wherein the temperature information comprises a temperature profile of the substrate.
29. A lithographic apparatus, comprising:
a substrate table constructed to hold a substrate;
a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with liquid;
a temperature sensor configured to determine a temperature;
a plurality of heaters, in or on the substrate table, configured to heat at least a portion of the substrate;
a substrate temperature control system configured to provide a control signal to control the plurality of heaters based on the determined temperature; and
a parameter control system configured to adjust a lithographic apparatus parameter, that is other than, or in addition to, the control signal and a temperature of the liquid as being supplied to the space by the liquid supply system, based on a temperature profile of the substrate or on a measure derived from the temperature profile.
30. The apparatus according to claim 29 , wherein the heaters extend substantially parallel to each other.
31. The apparatus according to claim 29 , wherein the plurality of heaters comprise a plurality of electric heaters, each of the plurality of electric heaters comprising an electrically conductive layer at or on a top surface of the substrate table.
32. The apparatus according to claim 29 , wherein the substrate temperature control system comprises a plurality of substrate temperature controllers, each substrate temperature controller configured to control a respective heater of the plurality of heaters and cause the respective heater of the plurality of heaters to have a different heating power than another heater of the plurality of heaters.
33. The apparatus according to claim 29 , wherein the parameter control system comprises a thermally-induced distortion control system configured to determine a thermally-induced distortion profile of the substrate and configured to adjust the lithographic apparatus parameter based on the thermally-induced distortion profile of the substrate.
34. The apparatus according to claim 29 , wherein the substrate temperature control system is further configured to provide the control signal to cause a heater of the plurality of heaters to have a different heating power than another heater of the plurality of heaters.
35. The apparatus according to claim 29 , wherein the lithographic apparatus parameter comprises a positional offset and the parameter control system is configured to provide the positional offset based on the temperature profile or on the measure derived from the temperature profile.
36. The apparatus according to claim 29 , wherein the lithographic apparatus parameter comprises a parameter of the patterned radiation beam and the parameter control system is configured to adjust the parameter of the patterned radiation beam based on the temperature profile or on the measure derived from the temperature profile.
37. The apparatus according to claim 29 , further comprising a barrier member arranged to at least partially contain the liquid within the space between the projection system and the substrate, the barrier member located above the substrate table, wherein the substrate table is moveable with respect to the barrier member.
38. The apparatus according to claim 37 , wherein the barrier member comprises an aperture through which the patterned beam is projected and an outlet, in a bottom surface of the barrier member and having portions on opposite sides of the aperture, configured to remove the liquid from the space, wherein the distance between the portions is smaller than the width of the substrate.