Granted Patent B2

US 8,338,698 · App. 12/870,055 · Granted Dec 25, 2012

Abstract

Claims (39)

1. A thin film photovoltaic device, comprising:

a glass substrate;

a transparent conductive oxide layer on the glass substrate;

an n-type thin film layer on the transparent conductive layer;

a p-type thin film layer on the n-type layer, wherein the n-type thin film layer and the p-type thin film layer form a p-n junction;

an anisotropic conductive layer on the p-type thin film layer, wherein the anisotropic conductive layer comprises a polymeric binder and a plurality of conductive particles; and,

a metal contact layer on the anisotropic conductive layer,

wherein a first isolation scribe extends through the p-type thin film layer to the glass substrate to form isolated cells in the device, wherein the first isolation scribe forms part of the anisotropic conductive layer and is filled with the polymeric binder and the conductive particles.

2. The device of claim 1 , wherein the conductive particles have a size sufficient to traverse the anisotropic conductive layer to provide a direct conductive connection between the p-type layer and the metal contact layer.

3. The device of claim 1 , wherein the anisotropic layer defines a thickness, and wherein the conductive particles have an average diameter that is about equal to the thickness of the anisotropic conductive layer to about 50% greater than the thickness of the anisotropic conductive layer.

4. The device of claim 1 , wherein the conductive particles have an average diameter of about 4 μm to about 8 μm, and wherein the anisotropic conductive layer has a thickness of about 4 μm to about 6 μm.

5. The device of claim 1 , wherein the conductive particles comprise metal-plated glass beads, metal particles, metal-plated polymeric beads, or combinations thereof.

6. The device of claim 1 , wherein the anisotropic conductive layer further comprises an inert filler material.

7. The device of claim 1 , wherein the anisotropic conductive layer has a resistance in a z-direction extending from the p-type layer to the metal contact layer of about 0.1 ohms to about 100 ohms, and wherein the anisotropic conductive layer has a resistance in a direction perpendicular to the z-direction of greater than about 100 kohms.

8. The device of claim 1 , wherein the n-type thin film layer comprises cadmium sulfide, and wherein the p-type thin film layer comprises cadmium telluride.

9. The device of claim 8 , further comprising:

a resistive transparent buffer layer between the transparent conductive oxide layer and the n-type thin film layer.

10. The device of claim 1 , wherein at least two adjacent individual conductive particles positioned within the first isolation scribe define a break therebetween to disrupt electrical flow through a plane defined by the anisotropic conductive layer.

11. The device of claim 1 , wherein the first isolation scribe has a width of about 50 μm to about 150 μm, and wherein the conductive particles have a diameter that is about 4 μm to about 8 μm.

12. The device of claim 11 , wherein the first isolation scribe has a width of about 75 μm to about 125 μm.

13. The device of claim 1 , further comprising:

a series connecting scribe forming part of the anisotropic conductive layer to contact the transparent conductive oxide layer to electrically connect adjacent cells to each other in series; and,

a second isolation scribe through the metal contact layer, the anisotropic conductive layer, the p-type thin film layer, and the n-type thin film layer.

14. The device of claim 1 , further comprising:

a series connecting scribe through the anisotropic conductive layer to the transparent conductive oxide layer, wherein the series connecting scribe forms part of the metal contact layer to electrically connect adjacent cells to each other in series; and,

a second isolation scribe through the metal contact layer, the anisotropic conductive layer, the p-type thin film layer, and the n-type thin film layer.

15. A thin film photovoltaic device, comprising:

a glass substrate;

a transparent conductive oxide layer on the glass substrate;

a resistive transparent buffer layer on the transparent conductive oxide layer;

a cadmium sulfide thin film layer on the resistive transparent buffer layer;

a cadmium telluride thin film layer on the cadmium sulfide thin film layer;

an anisotropic conductive layer on the cadmium telluride thin film layer, wherein the anisotropic conductive layer comprises a polymeric binder and a plurality of conductive particles, wherein the anisotropic conductive layer has a resistance in a z-direction extending from the p-type layer to the metal contact layer of about 0.1 ohms to about 100 ohms, and wherein the anisotropic conductive layer has a resistance in a direction perpendicular to the z-direction of greater than about 100 kohms; and,

a metal contact layer on the anisotropic conductive layer,

wherein a first isolation scribe extends through the p-type thin film layer to the glass substrate to form isolated cells in the device, wherein the first isolation scribe forms part of the anisotropic conductive layer and is filled with the polymeric binder and the conductive particles.

16. The device of claim 15 , wherein the conductive particles have a size sufficient to traverse the anisotropic conductive layer to provide a direct conductive connection between the cadmium telluride thin film layer and the metal contact layer.

17. The device of claim 15 , further comprising:

a series connecting scribe forming part of the anisotropic conductive layer to contact the transparent conductive oxide layer to electrically connect adjacent cells to each other in series; and,

a second isolation scribe through the metal contact layer, the anisotropic conductive layer, the cadmium telluride thin film layer, and the cadmium sulfide thin film layer.

Assignments (8)