APPARATUS AND METHOD OF FORMING A MEMS ACOUSTIC TRANSDUCER WITH LAYER TRANSFER PROCESSES

1 . A method of forming a MEMS acoustic transducer, the method comprising:

forming circuitry and first MEMS microstructure on a first wafer in a first process;

forming second MEMS microstructure on a second wafer in a second process, the first process being thermally isolated from the second process; and

layer transferring the second MEMS microstructure onto the first wafer, the first MEMS microstructure and second MEMS microstructure forming a variable capacitor that communicates with the circuitry on the first wafer.

2 . The method as defined by claim 1 wherein the first MEMS microstructure comprises a first capacitive plate, and the second MEMS microstructure comprises a second capacitive plate, the first and second capacitive plates forming the variable capacitor.

3 . The method as defined by claim 2 wherein the first capacitive plate comprises a backplate and the second capacitive plate comprises a diaphragm.

4 . The method as defined by claim 1 wherein layer transferring comprises bonding the second wafer to the first wafer, and removing at least one entire layer of the second wafer after bonding.

5 . The method as defined by claim 1 wherein the first wafer comprises a SOI wafer.

6 . The method as defined by claim 1 wherein the first MEMS microstructure and second MEMS microstructure both are formed at least in part from a silicon-based material.

7 . The method as defined by claim 6 wherein the second wafer comprises at least one of polysilicon, single crystal silicon, silicon carbide, or silicon germanium.

8 . The method as defined by claim 1 further comprising releasing at least the second MEMS microstructure after layer transferring the second MEMS microstructure onto the first wafer.

9 . The apparatus formed by the method of claim 1 .

10 . A method of forming a MEMS microphone, the method comprising:

forming circuitry and a semiconductor backplate on a first wafer;

forming a semiconductor diaphragm on a second wafer; and

forming a variable capacitor on the first wafer by layer transferring the semiconductor diaphragm onto the first wafer, the variable capacitor comprising the backplate and diaphragm to form a MEMS microphone, the capacitor being electrically connected with the circuitry.

11 . The method as defined by claim 10 wherein the first wafer comprises an SOI wafer.

12 . The method as defined by claim 10 wherein layer transferring comprises bonding the second wafer to the first wafer, and removing at least one entire layer of the second wafer after bonding.

13 . The method as defined by claim 10 wherein the semiconductor diaphragm comprises at least one of polysilicon, single crystal silicon, silicon carbide, and silicon germanium.

14 . The method as defined by claim 10 further comprising releasing at least the semiconductor diaphragm after layer transferring the semiconductor diaphragm onto the first wafer.

15 . The method as defined by claim 10 wherein the semiconductor backplate is formed in a first process, and the semiconductor diaphragm is formed in a second process, the first process being thermally isolated from the second process.

16 . The apparatus formed by the process of claim 10 .

17 . A MEMS microphone comprising:

a backplate comprised of single crystal silicon;

circuitry formed on the single crystal backplate; and

a diaphragm coupled with the backplate and forming a variable capacitor with the backplate, the diaphragm being comprised of single crystal silicon.

18 . The MEMS microphone as defined by claim 17 further comprising a plurality of springs supporting the diaphragm.

19 . The MEMS microphone as defined by claim 17 wherein the backplate is formed from a layer of an SOI wafer.