Organic light emitting diode display device

1. An organic light emitting diode (OLED) display device, comprising:

a first substrate;

a second substrate disposed spaced apart from and opposite to the first substrate;

a first electrode positioned on the first substrate;

an organic light emission layer positioned on the first electrode;

a second electrode positioned on the organic light emission layer; and

an entirely amorphous capping layer positioned on the second electrode to cover the organic light emission layer, said capping layer comprising an ultraviolet (UV) interception material intercepting UV rays irradiated to the organic light emission layer from an exterior of the OLED display device,

wherein the capping layer is deposited by the atom or by the molecule, and the capping layer comprises one or more of a-NPD, NPB, TPD, m-MTDATA, Alq3, or CuPc.

2. The OLED display device of claim 1 , wherein the UV interception material comprises one or more of zinc oxide, titanium oxide, iron oxide, or magnesium oxide.

3. The OLED display device of claim 1 , wherein the capping layer further comprises a UV interception layer comprising a UV interception material.

4. The OLED display device of claim 3 , wherein the UV interception layer is separated from the second electrode.

5. An organic light emitting diode (OLED) display device, comprising:

a first substrate;

a second substrate disposed spaced apart from and opposite to the first substrate;

an organic light emitting element disposed on the first substrate, the organic light emitting element comprising a first electrode, a second electrode and an organic light emission layer interposed between the first and second electrodes; and

an entirely amorphous capping layer covering the entirety of an upper surface of the organic light emitting element, and the capping layer intercepting ultraviolet (UV) rays irradiated to the organic light emission layer from an exterior of the OLED display device,

wherein the capping layer is deposited by the atom or by the molecule,

wherein the capping layer comprises an amorphous base layer and an amorphous UV interception layer different from the amorphous base layer, the amorphous base layer is disposed directly on the second electrode, the amorphous UV interception layer is disposed directly on the amorphous base layer, the amorphous base layer comprises at least one of silicon compound, a-NPD, NPB, TPD, m-MTDATA, Alq3, LiF, or CuPc, the amorphous UV interception layer comprises at least one of zinc oxide, titanium oxide, iron oxide, or magnesium oxide.

6. The OLED display device of claim 5 , wherein the capping layer is an amorphous inorganic film comprising silicon (Si).

7. The OLED display device of claim 5 , wherein the UV interception layer is disposed spaced-apart from the second electrode.