Low energy portable low-light camera with wavelength cutoff
View Patent ↗A sensor for night vision applications is provided, wherein the sensor comprises a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength. The selection of this cutoff frequency provides improved dark current performance, thereby requiring less cooling of the sensor. Consequently, energy consumption is reduced, as the sensor does not require active cooling, so that the sensor is particularly beneficial for mobile night vision applications where battery weight is of high importance.
1. A night vision apparatus, comprising:
a sensor comprising a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength;
an imaging chip positioned behind and connected to the sensor;
electronics collecting signals from the imaging chip;
wherein the camera senses light at low lighting conditions at wavelengths restricted to be below 1.4 μm with low dark current at ambient operating temperatures.
2. The night vision apparatus of claim 1 , wherein the absorption layer comprises InGaAsP having a composition that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength.
3. The night vision apparatus of claim 2 , wherein the absorption layer comprises In 1-x Ga x As y P 1-y composition in the range of In 0.68 Ga 0.32 As 0.69 P 0.31 to In 0.76 Ga 0.24 As 0.51 P 0.49 .
4. The night vision apparatus of claim 2 , wherein the absorption layer comprises In 0.71 Ga 0.29 As 0.63 P 0.37 .
5. The night vision apparatus of claim 2 , wherein the absorption layer comprises a semiconductor having a bandgap in the 1.35-1.40 microns wavelength.
6. The night vision apparatus of claim 1 , wherein the imaging chip comprises a CMOS anode array having 1600×1200 pixels.
7. The night vision apparatus of claim 6 , wherein the imaging chip comprises a 10.8 micron pixel pitch.
8. The night vision apparatus of claim 7 , wherein the imaging chip operates at 60 Hz.
9. The night vision apparatus of claim 1 , wherein the absorption layer comprises (Al s Ga 1-s ) 1-t In t As semiconductor alloy system wherein s, and t vary between 0 and 1.
10. A sensor for night vision applications, comprising:
an InP substrate;
an InP buffer layer fabricated on one surface of the InP substrate;
an InGaAsP absorption layer fabricated on the InP buffer layer;
an InP cap layer formed over the absorption layer; and,
wherein the InGaAsP absorption layer limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength.
11. The sensor of claim 10 , further comprising a grading layer fabricated between the InGaAsP absorption layer and the InP cap layer, and wherein the InP cap layer forms an emitter layer.
12. The sensor of claim 11 , further comprising:
a schottky barrier layer formed over the InP cap layer; and,
contact grid formed over the InP cap layer.
13. The sensor of claim 12 , wherein the InGaAsP absorption layer comprises In 1-x Ga x As y P 1-y composition in the range of In 0.68 Ga 0.32 As 0.69 P 0.31 to In 0.76 Ga 0.24 As 0.51 P 0.49 .
14. The sensor of claim 10 , further comprising a p-type diffusion layer formed through the InP cap layer and partially extending into the InGaAsP absorption layer.
15. The sensor of claim 14 , wherein the InGaAsP absorption layer comprises In 1-x Ga x As y P 1-y composition in the range of In 0.68 Ga 0.32 As 0.69 P 0.31 to In 0.76 Ga 0.24 As 0.51 P 0.49 .
16. The sensor of claim 10 , wherein the InGaAsP absorption layer comprises In 1-x Ga x As y P 1-y composition in the range of In 0.68 Ga 0.32 As 0.69 P 0.31 to In 0.76 Ga 0.24 As 0.51 P 0.49 .
17. A night vision apparatus, comprising:
a sensor that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength;
an imaging chip positioned behind and connected to the sensor and comprising an array having 1600×1200 pixels at a 10.8 micron pixel pitch and operating at 60 Hz.
18. The night vision apparatus of claim 17 , wherein the sensor comprises an InP substrate and an InGaAsP absorption layer fabricated over the InP substrate.
19. The night vision apparatus of claim 18 , wherein the InGaAsP absorption layer comprises In 1-x Ga x As y P 1-y composition in the range of In 0.68 Ga 0.32 As 0.69 P 0.31 to In 0.76 Ga 0.24 As 0.51 P 0.49 .
20. The night vision apparatus of claim 17 , wherein the sensor comprises an absorption layer consisting (Al s Ga 1-s ) 1-t In t As semiconductor alloy system wherein s, and t vary between 0 and 1.