IP Library Granted Patent US 8,085,094
Granted Patent B2
US 8,085,094 · App. 12/873,344 · Granted Dec 27, 2011

High frequency amplifier

Assignee: Mitsubishi Electric Corporation
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Quick Facts
Patent No.
US 8,085,094
App. No.
12/873,344
Granted
Dec 27, 2011
Kind
B2
Abstract

A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device.

Claims (9)

1. A high frequency amplifier comprising:

a package substrate;

an amplifying active device disposed on a top surface of said package substrate;

a transmission line connected to said amplifying active device and transmitting a high frequency signal;

a surface mounted device (SMD) component shunt-connected at a first end of said SMD component to said transmission line;

a SMD component terminal connected to a second end of said SMD component and partially exposed at a back surface of said package substrate; and

an external terminal partially exposed at said back surface of said package substrate and connected to a first end of said transmission line, opposite a second end of said transmission line that is connected to said amplifying active device.

2. The high frequency amplifier according to claim 1 , further comprising a plurality of said SMD components and a plurality of said SMD component terminals, equal in number to said SMD components, wherein each of said SMD components is connected to or associated with a different one of said SMD component terminals.

3. The high frequency amplifier according to claim 1 , wherein said SMD component terminal and said external terminal are disposed adjacent each other.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2020
From: MITSUBISHI ELECTRIC CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 052122/0475 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 1, 2010
From: OKUDA, TOSHIO
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 024921/0590 →
Priority Claims (1)
JP 2010-004272 · Jan 12, 2010 · national
Continuity (1)
Related Publication 20110169576A1 · Jul 14, 2011