SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.
1 . A semiconductor light emitting element comprising:
a conductive substrate;
a bonding portion provided on the conductive substrate and including a first metal film;
an intermediate metal film provided on the bonding portion and having a larger linear expansion coefficient than the first metal film;
a first electrode provided on the intermediate metal film and including a second metal film having a larger linear expansion coefficient than the intermediate metal film;
a semiconductor stacked body provided on the first electrode and including a light emitting portion; and
a second electrode provided on the semiconductor stacked body.
2 . The element according to claim 1 , wherein
the first electrode further includes a third metal film provided between the semiconductor stacked body and the second metal film, and
the intermediate metal film has a larger film thickness than the third metal film.
3 . The element according to claim 1 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd.
4 . The element according to claim 1 , wherein the bonding portion is a metal multilayer film including the first metal film.
5 . The element according to claim 1 , wherein the first metal film is made of Ni.
6 . The element according to claim 1 , wherein the intermediate metal film is provided between the first metal film and the second metal film.
7 . The element according to claim 1 , wherein the second metal film is made of Ag.
8 . The element according to claim 1 , wherein the bonding portion includes a fourth metal film being in contact with at least an end surface of the first electrode and being resistant to etching for the semiconductor stacked body.
9 . The element according to claim 8 , wherein the bonding portion is a metal multilayer film including the first metal film.
10 . A method for manufacturing a semiconductor light emitting element, comprising:
forming a semiconductor stacked body including a light emitting portion on a growth substrate;
forming an electrode including a first metal film on the semiconductor stacked body;
forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;
forming a bonding portion on the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;
bonding a support substrate via the bonding portion; and
removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body.
11 . The method according to claim 10 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd.
12 . The method according to claim 10 , wherein the bonding portion is a metal multilayer film including the first metal film.
13 . The method according to claim 10 , wherein the first metal film is made of Ni.
14 . The method according to claim 10 , wherein the second metal film is made of Ag.
15 . A method for manufacturing a semiconductor light emitting element, comprising:
forming a semiconductor stacked body including a light emitting portion on a growth substrate;
forming an electrode including a first metal film on the semiconductor stacked body;
forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;
selectively etching and dividing the electrode and the intermediate metal film, and forming a bonding portion so as to cover each of the electrode and the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;
bonding a support substrate via the bonding portion;
removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body; and
etching the semiconductor stacked body using the bonding portion as a stopper.
16 . The method according to claim 15 , wherein the intermediate metal film is made of one selected from Ni, Pt, Rh, and Pd.
17 . The method according to claim 15 , wherein the bonding portion is a metal multilayer film including the first metal film.
18 . The method according to claim 15 , wherein the first metal film is made of Ni.
19 . The method according to claim 15 , wherein the second metal film is made of Ag.