White light emitting device
View Patent ↗A white light emitting device capable of expanding the wavelength range of a blue LED used for realizing white light. The white light emitting device according to the present invention includes a blue LED and a mixture of orange phosphor and green phosphor disposed above the blue LED.
1. A backlight of a liquid crystal display device having a white light emitting device,
wherein the white light emitting device comprises:
a light emitting diode having an emission peak in a range of 420 to 460 nm; and
a mixture of a first phosphor having an emission peak in a range of 560 to 590 nm and a second phosphor having an emission peak in a range of 510 to 550 nm disposed above the light emitting diode,
wherein the first phosphor comprises a Ca-α sialon phosphor having a composition expressed by the following formula: Ca x Si 12-(z+w) Al z+w O w N 16-w :Eu y 2+ , where 0.5<x<0.9, 0.01<y<0.15, 0<z<4, 0<w<4 and 0<z+w<4;
the second phosphor comprises a SrSiON phosphor having a composition expressed by the following formula: SrSi 2 O 2 N 2 :Eu; and
the white light emitting device emits white light in a region of x=0.27 to 0.33, y=0.25 to 0.35 in the 1931 CIE chromaticity coordinates by combination of the light emitting diode and the mixture of the first phosphor and the second phosphor, wherein the second phosphor further comprises Y 3 (Al,Ga) 5 O 12 :Ce.
2. A white light emitting device comprising:
a light emitting diode having an emission peak in a range of 420 to 460 nm; and
a mixture of a first phosphor having an emission peak in a range of 560 to 590 nm and a second phosphor having an emission peak in a range of 510 to 550 nm disposed above the light emitting diode,
wherein the first phosphor comprises a Ca-α sialon phosphor having a composition expressed by the following formula: Ca x Si 12-(z+w) Al z+w O w N 16-w :Eu y 2+ , where 0.5<x<0.9, 0.01<y<0.15, 0<z<4, 0<w<4 and 0<z+w<4;
the second phosphor comprises a SrSiON phosphor having a composition expressed by the following formula: SrSi 2 O 2 N 2 :Eu; and
the white light emitting device emits white light in a region of x=0.27 to 0.33, y=0.25 to 0.35 in the 1931 CIE chromaticity coordinates by combination of the light emitting diode and the mixture of the first phosphor and the second phosphor, wherein the second phosphor further comprises Y 3 (Al,Ga) 5 O 12 :Ce.
3. A display device comprising:
a display panel; and
a backlight unit which emits light to the display panel, the backlight unit comprising a white light emitting device,
wherein the white light emitting device comprises:
a light emitting diode having an emission peak in a range of 420 to 460 nm; and
a mixture of a first phosphor having an emission peak in a range of 560 to 590 nm and a second phosphor having an emission peak in a range of 510 to 550 nm disposed above the light emitting diode,
wherein the first phosphor comprises a Ca-α sialon phosphor having a composition expressed by the following formula: Ca x Si 12-(z+w) Al z+w O w N 16-w :Eu y 2+ , where 0.5<x<0.9, 0.01<y<0.15, 0<z<4, 0<w<4 and 0<z+w<4;
the second phosphor comprises a SrSiON phosphor having a composition expressed by the following formula: SrSi 2 O 2 N 2 :Eu; and
the white light emitting device emits white light in a region of x=0.27 to 0.33, y=0.25 to 0.35 in the 1931 CIE chromaticity coordinates by combination of the light emitting diode and the mixture of the first phosphor and the second phosphor, wherein the second phosphor further comprises Y 3 (Al,Ga) 5 O 12 :Ce.
4. A white light emitting device comprising:
a light emitting diode having an emission peak in a range of 420 to 480 nm; and
a mixture of a first phosphor having an emission peak in a range of 560 to 590 nm and a second phosphor having an emission peak in a range of 510 to 550 nm disposed above the light emitting diode,
wherein the first phosphor comprises Zn(Se 0.1 ,S 0.9 ):Cu and the second phosphor comprises an Eu-doped β-sialon;
the mixture of the first phosphor and the second phosphor is excited by the light emitting diode to have an emission peak in a range of 540 to 580 nm; and
the white light emitting device emits white light in a region of x=0.27 to 0.33, y=0.25 to 0.35 in the 1931 CIE chromaticity coordinates by combination of the light emitting diode and the mixture of the first phosphor and the second phosphor.
5. The white light emitting device according to claim 4 , wherein the first phosphor further comprises α-sialon:Eu.
6. The white light emitting device according to claim 4 , wherein the second phosphor further comprises Y 3 (Al,Ga) 5 O 12 :Ce.