Passivated micromechanical resonators and related methods
Passivated micromechanical resonators and related methods are described. Applicants have appreciated that polycrystalline conductive layers used as electrodes for some MEMS resonators are a source of mechanical and electrical instability. To inhibit or prevent contamination of such conductive layers, which may exacerbate the instabilities, passivation structures are used. The passivation structures can be grown, deposited, or otherwise formed.
1. A micromechanical resonator, comprising:
a micromechanical resonating structure comprising a piezoelectric active layer;
a first electrode disposed on a first side of the piezoelectric active layer;
a patterned second electrode disposed on a second side of the piezoelectric active layer so that the piezoelectric active layer is between the first electrode and the second electrode, the patterned second electrode being polycrystalline; and
a passivation structure formed on the patterned second electrode and configured to inhibit external contaminants from entering grain boundaries of the patterned second electrode,
wherein the piezoelectric active layer comprises a piezoelectric material and wherein the passivation structure comprises the piezoelectric material.
2. The micromechanical resonator of claim 1 , wherein the micromechanical resonating structure is configured to support Lamb waves in response to excitation.
3. A micromechanical resonator, comprising:
a micromechanical resonating structure comprising a piezoelectric active layer;
a first electrode disposed on a first side of the piezoelectric active layer;
a patterned second electrode disposed on a second side of the piezoelectric active layer so that the piezoelectric active layer is between the first electrode and the second electrode, the patterned second electrode being polycrystalline; and
a passivation structure formed on the patterned second electrode and configured to inhibit external contaminants from entering grain boundaries of the patterned second electrode,
wherein the piezoelectric active layer is configured to exhibit resonance vibration having a wavelength λ, and wherein the passivation structure has a thickness h given by 0.00001≦h/λ≦0.1.
4. The micromechanical resonator of claim 3 , wherein the first electrode is patterned.
5. The micromechanical resonator of claim 3 , wherein the passivation structure is patterned in a same shape as the patterned second electrode.
6. The micromechanical resonator of claim 3 , wherein the passivation structure is unpatterned.
7. The micromechanical resonator of claim 3 , wherein the thickness of the passivation structure is given by 0.0003≦h/λ≦0.05.
8. The micromechanical resonator of claim 3 , wherein the micromechanical resonating structure is acoustically isolated from a substrate of the micromechanical resonator.
9. The micromechanical resonator of claim 3 , wherein the micromechanical resonating structure has a large dimension less than approximately 500 microns.
10. A micromechanical resonator, comprising:
a micromechanical resonating structure comprising a piezoelectric active layer;
a first electrode disposed on a first side of the piezoelectric active layer;
a patterned second electrode disposed on a second side of the piezoelectric active layer so that the piezoelectric active layer is between the first electrode and the second electrode, the patterned second electrode being polycrystalline; and
a passivation structure formed on the patterned second electrode and configured to inhibit external contaminants from entering grain boundaries of the patterned second electrode,
wherein the resonator has a total thickness h res and wherein the passivation structure has a thickness h given by 0.00001≦h/h res ≦0.1.
11. The micromechanical resonator of claim 10 , wherein the passivation structure has a thickness given by 0.0003≦h/h res ≦0.05.
12. A micromechanical resonator, comprising:
a micromechanical resonating structure comprising a piezoelectric active layer;
a first electrode disposed on a first side of the piezoelectric active layer;
a patterned second electrode disposed on a second side of the piezoelectric active layer so that the piezoelectric active layer is between the first electrode and the second electrode, the patterned second electrode being polycrystalline; and
a passivation structure formed on the patterned second electrode and configured to inhibit external contaminants from entering grain boundaries of the patterned second electrode,
wherein the patterned second electrode is formed of a first material, wherein the passivation structure is formed of the first material and has a polycrystalline structure, and wherein grain boundaries of the patterned second electrode do not substantially align with grain boundaries of the passivation structure.
13. The micromechanical resonator of claim 12 , wherein the passivation structure is monocrystalline.
14. The micromechanical resonator of claim 12 , wherein the passivation structure is polycrystalline and has a crystal configuration that does not substantially align with grain boundaries of the second electrode.
15. A method of fabricating a passivated microelectromechanical resonator, the method comprising:
forming an active layer of a micromechanical resonating structure;
forming a polycrystalline electrode on the active layer; and
forming a passivation structure on the polycrystalline electrode having a different crystal configuration than a crystal configuration of the polycrystalline electrode,
wherein forming the passivation structure comprises forming the passivation structure of a same piezoelectric material as is used in forming the active layer.
16. A passivated micromechanical resonator, comprising:
a substrate;
a first electrical pad on the substrate;
a second electrical pad on the substrate;
a micromechanical resonating structure electrically coupled to the first electrical pad and the second electrical pad and comprising:
a layered temperature compensation structure comprising a first layer and a second layer, the layered temperature compensation structure configured to stabilize operation of the micromechanical resonating structure as temperature varies;
a bottom electrode disposed on the layered temperature compensation structure;
an active layer comprising a piezoelectric material disposed on the bottom electrode;
a polycrystalline top electrode disposed on the active layer; and
a passivation layer disposed on the polycrystalline top electrode and configured to inhibit contact of external materials with the polycrystalline top electrode; and
a first anchor and a second anchor mechanically coupling the micromechanical resonating structure to the substrate.
17. The passivated micromechanical resonator of claim 16 , wherein the layered temperature compensation structure further comprises a third layer formed of a same material as the first layer, and wherein the second layer of the layered temperature compensation structure is arranged between the first layer and the third layer.
18. The passivated micromechanical resonator of claim 16 , wherein the active layer is configured to support Lamb waves in response to excitation.
19. A method of fabricating a passivated microelectromechanical resonator, the method comprising:
forming an active layer of a micromechanical resonating structure;
forming a polycrystalline electrode on the active layer; and
forming a passivation structure on the polycrystalline electrode having a different crystal configuration than a crystal configuration of the polycrystalline electrode,
wherein the active layer is configured to support a resonance vibration mode having a wavelength λ, and wherein forming the passivation structure comprises forming the passivation structure to have a thickness h satisfying the condition 0.00001≦h/λ≦0.1.
20. A method of fabricating a passivated microelectromechanical resonator, the method comprising:
forming an active layer of a micromechanical resonating structure;
forming a polycrystalline electrode on the active layer; and
forming a passivation structure on the polycrystalline electrode having a different crystal configuration than a crystal configuration of the polycrystalline electrode,
wherein the polycrystalline electrode is a first electrode and is patterned, and wherein the method further comprises forming a second electrode, wherein the active layer is configured between the first electrode and the second electrode.