IP Library Granted Patent US 8,605,504
Granted Patent B2
US 8,605,504 · App. 12/886,260 · Granted Dec 10, 2013

Memory system

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Quick Facts
Patent No.
US 8,605,504
App. No.
12/886,260
Granted
Dec 10, 2013
Kind
B2
Abstract

According to the embodiments, a memory system includes a nonvolatile semiconductor memory and a writing-loop-count monitoring unit that monitors a loop count of an applied voltage to the nonvolatile semiconductor memory required for data writing of the nonvolatile semiconductor memory as a writing loop count. Moreover, the memory system includes a management table for managing the writing loop count in block unit that is a unit of data erasing and a life managing unit that determines a degraded state of the nonvolatile semiconductor memory based on the management table.

Claims (54)

1. A system comprising:

a memory system; and

a management unit to be installed in a host with a display device to be connected to the memory system, the management unit configured to determine a state of a memory of the memory system,

the memory system comprising:

a first semiconductor nonvolatile memory configured to include a memory that buffers data;

a second semiconductor nonvolatile memory configured to store management information of the first semiconductor nonvolatile memory;

a controller configured to control the first and second semiconductor nonvolatile memories;

a temperature sensor configured to detect temperature in the memory system and output temperature information; and

an LED configured to indicate the status of the memory system, wherein

the second semiconductor nonvolatile memory is configured to store a first information related to a total capacity of the memory of the memory system, and a second information related to a degraded state of the memory of the memory system, and

the management unit is configured to calculate a ratio, that indicates the state of the memory of the memory system based on the first and second information, and configured to cause the display device to display a warning based upon a value of the ratio.

2. The system according to claim 1 , wherein

the management unit is configured to cause the display device to display a first warning based upon the value of the ratio, and when degradation has progressed, configured to cause the display device to further display a second warning that indicates a life of the memory system becomes shorter based upon the value of the ratio.

3. The system according to claim 1 , wherein

the management unit is configured to determine which degraded stage the degraded state is among a plurality of degraded stages, and cause the display device to display a third warning that indicates the determined degraded stage.

4. The system according to claim 2 , wherein

the first semiconductor nonvolatile memory is a NAND flash memory.

5. The system according to claim 4 , wherein

the second information is managed in block units in the first semiconductor nonvolatile memory.

6. The system according to claim 5 , wherein

the second information includes a loop count at a time of erasing in the first semiconductor nonvolatile memory for each block unit.

7. The system according to claim 5 , wherein

the second information includes a loop count at a time of writing in the first semiconductor nonvolatile memory for each block unit.

8. The system according to claim 5 , wherein

the second semiconductor nonvolatile memory is a FeRAM.

9. The system according to claim 5 , wherein

the second semiconductor nonvolatile memory is a MRAM.

10. A managing method comprising:

determining a state of a memory of a memory system, the memory system connected to a management unit to be installed in a host with a display device;

buffering data in a first semiconductor nonvolatile memory;

storing management information of the first semiconductor nonvolatile memory in a second semiconductor nonvolatile memory;

controlling the first and second semiconductor nonvolatile memories;

detecting temperature in the memory system and outputting temperature information;

indicating the status of the memory system;

storing a first information related to a total capacity of the memory of the memory system, and a second information related to a degraded state of the memory of the memory system, in the second semiconductor nonvolatile memory;

calculating a ratio that indicates a state of the memory of the memory system based on the first and second information; and

displaying a warning based upon a value of the ratio.

11. The managing method according to claim 10 , further comprising:

displaying a first warning based upon the value of the ratio, and when degradation has progressed, further displaying a second warning that indicates a life of the memory system becomes shorter based upon the value of the ratio.

12. The managing method according to claim 10 , further comprising:

determining which degraded stage the degraded state is among a plurality of degraded stages, and

displaying a third warning that indicates the determined the degraded stage.

13. The managing method according to claim 11 , wherein

the first semiconductor nonvolatile memory is a NAND flash memory.

14. The managing method according to claim 13 , further comprising:

managing the second information in block units in the first semiconductor nonvolatile memory.

15. The managing method according to claim 14 , wherein

the second information includes a loop count at a time of erasing in the first semiconductor nonvolatile memory for each block unit.

16. The managing method according to claim 14 , wherein

the second information includes a loop count at a time of writing in the first semiconductor nonvolatile memory for each block unit.

17. The managing method according to claim 14 , wherein

the second semiconductor nonvolatile memory is a FeRAM.

18. The managing method according to claim 14 , wherein

the second semiconductor nonvolatile memory is a MRAM.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043088/0620 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2010
From: OKAMOTO, SHINKEN
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 025023/0834 →