Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof
View Patent ↗Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
1. A light emitting device comprising:
a substrate;
a quantum dot-block copolymer hybrid layer disposed on the substrate; and
a light emitting diode interposed between the substrate and at least a portion of the quantum dot-block copolymer hybrid layer,
wherein the quantum dot-block copolymer hybrid layer comprises:
a quantum dot; and
a block copolymer which surrounds the quantum dot,
wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
2. The light emitting device of claim 1 , wherein the functional group comprises one selected from the group consisting of alkylthiol, alkyl xanthate, and dialkylthiocarbamate, in which a carbon number of an alkyl group is in a range of about 1 to about 22 carbon atoms.
3. The light emitting device of claim 1 , wherein the quantum dot comprises at least one of group II-VI elements, group III-V elements, group IV elements, and group IV-VI elements.
4. The light emitting device of claim 3 , wherein the quantum dot has one of a single core structure, a core-single shell structure, and a core-multi-shell structure.
5. The light emitting device of claim 3 , wherein the group II element comprises at least one selected from the group consisting of zinc (Zn), cadmium (Cd), and mercury (Hg), the group III element comprises at least one selected from the group consisting of aluminum (Al), gallium (Ga), and indium (In), the group IV element comprises at least one selected from the group consisting of silicon (Si), germanium (Ge), tin (Sn), and lead (Pb), the group V element comprises at least one selected from the group consisting of nitrogen (N), phosphorus (P), and arsenic (As), and the group VI element comprises at least one selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
6. The light emitting device of claim 1 , wherein the light emitting diode emits a light, and the quantum dot absorbs the light and emits a visible ray corresponding to an energy band gap between an excited state and a ground state of the quantum dot.