Non-blocked phosphorescent OLEDs
An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.
1. A device comprising:
an anode and a cathode;
an emissive layer disposed between and electrically connected to the anode and the cathode, the emissive layer comprising an organic host and an organic dopant;
an organic hole transport layer between the anode and the emissive layer;
an organic electron transport layer between the cathode and the emissive layer,
wherein said electron transport layer is a single layer and is the only layer between the cathode and the emissive layer,
the HOMO level of the organic host is no more than 0.8 eV below the HOMO level of the hole transport layer,
the LUMO level of the organic host is no more than 0.4 eV above the LUMO level of the electron transport layer, and
the HOMO level of the electron transport layer is no more than 0.4 eV below the HOMO level of the host,
the HOMO and LUMO levels being calculated by density functional calculation,
wherein the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 30%.
2. The device of claim 1 , wherein the organic dopant is a phosphorescent material.
3. The device of claim 2 , wherein the dopant is Ir(5-Phppy) 3 .
4. The device of claim 2 , wherein the dopant is Ir(3′-Meppy) 3 .
5. The device of claim 2 , wherein there is a triplet recombination zone within the emissive layer, not more than 10% of the thickness of the emissive layer away from an interface between the emissive layer with the hole transport layer.
6. The device of claim 2 , wherein
HOMO
Host
-
HOMO
HoleTransportLayer
LUMO
ElectronTransportLayer
-
LUMO
Host
<
2.0
.
7. The device of claim 2 , wherein the organic dopant has a triplet energy corresponding to a peak emission wavelength of less than 60 nm.
8. The device of claim 7 , wherein the dopant is an iridium(III) organometallic complex.
9. The device of claim 1 , wherein the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 20%.
10. A device comprising:
an anode and a cathode;
an emissive layer disposed between and electrically connected to the anode and the cathode, the emissive layer comprising an organic host and an organic dopant;
an organic hole transport layer between the anode and the emissive layer;
an organic electron transport layer between the cathode and the emissive layer,
wherein said electron transport layer is a single layer and is the only layer between the cathode and the emissive layer,
the HOMO level of the organic host is no more than 0.8 eV below the HOMO level of the hole transport layer,
the LUMO level of the organic host is no more than 0.4 eV above the LUMO level of the electron transport layer, and
the HOMO level of the electron transport layer is no more than 0.4 eV below the HOMO level of the host,
the HOMO and LUMO levels being calculated by density functional calculation,
the organic dopant is a phosphorescent dopant having a triplet energy corresponding to a peak emission wavelength of less than 600 nm, and
the host comprises a fused-aryl ring compound,
wherein the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 30%.
11. The device of claim 10 , wherein the fused-aryl ring compound comprises a naphthalene moiety.
12. The device of claim 10 , wherein the fused-aryl ring compound comprises a phenanthrene moiety.
13. The device of claim 10 , wherein the organic host is a dicarbazolephenanthren compound.
14. The device of claim 10 , wherein the organic dopant is Ir(5-Phppy) 3 .
15. The device of claim 10 , wherein the organic dopant is Ir(3′-Meppy) 3 .
16. The device of claim 10 , wherein the organic host is a dicarbazolephenanthren compound and the organic dopant is Ir(3′-Meppy) 3 .
17. The device of claim 10 , wherein there is a triplet recombination zone within the emissive layer, not more than 10% of the thickness of the emissive layer away from an interface between the emissive layer with the hole transport layer.
18. The device of claim 10 , wherein the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 20%.
19. A device comprising:
an anode and a cathode;
an emissive layer disposed between and electrically connected to the anode and the cathode, the emissive layer comprising an organic host and an organic dopant;
an organic hole transport layer between the anode and the emissive layer;
an organic electron transport layer between the cathode and the emissive layer,
wherein said electron transport layer is a single layer and is the only layer between the cathode and the emissive layer,
the HOMO level of the organic host is no more than 0.8 eV below the HOMO level of the hole transport layer,
the LUMO level of the organic host is no more than 0.4 eV above the LUMO level of the electron transport layer, and
the HOMO level of the electron transport layer is no more than 0.4 eV below the HOMO level of the host,
the HOMO and LUMO levels being calculated by density functional calculation,
the organic dopant is a phosphorescent dopant having a triplet energy corresponding to a peak emission wavelength of less than 600 nm, and
the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 30%.
20. The device of claim 19 , wherein the dopant is Ir(5-Phppy) 3 .
21. The device of claim 19 , wherein the dopant is Ir(3′-Meppy) 3 .
22. The device of claim 19 , wherein there is a triplet recombination zone within the emissive layer, not more than 10% of the thickness of the emissive layer away from an interface between the emissive layer with the hole transport layer.
23. The device of claim 19 , wherein the device has a lifetime >3,000 hours to 80% of an initial luminance of 1,000 cd/m 2 .
24. The device of claim 19 , wherein the device has a lifetime >10,000 hours to 50% of an initial luminance of 1,000 cd/m 2 .
25. The device of claim 19 , wherein the device has an external quantum efficiency of over 9.2% at 500 cd/m 2 and up to about 20%.