Substrate for growing a III-V light emitting device
View Patent ↗A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
1. A method comprising:
providing a substrate comprising:
a host;
a III-nitride seed layer bonded to the host;
growing on the seed layer a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein the seed layer is oriented such that the semiconductor structure is grown on a gallium polarity of the seed layer;
wherein providing a substrate comprises:
growing the III-nitride seed layer on a growth substrate, wherein the III-nitride seed layer is strained; and releasing the III-nitride seed layer from the growth substrate such that the III-nitride seed layer at least partially relaxes.
2. A method comprising:
providing a substrate comprising:
a host;
a III-nitride seed layer bonded to the host;
growing on the seed layer a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein the seed layer is oriented such that the semiconductor structure is grown on a gallium polarity of the seed layer;
wherein the host is a first host and providing a substrate comprises:
growing the III-nitride seed layer on a growth substrate;
attaching the III-nitride seed layer to the first host; and
removing the growth substrate;
implanting an implant material in the Ill-nitride seed layer;
bonding the III-nitride seed layer to a second host; and
heating the III-nitride seed layer such that the implant material separates the III-nitride seed layer.
3. A method comprising:
providing a substrate comprising:
a host;
a III-nitride seed layer bonded to the host; and
growing on the seed layer a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein the seed layer is oriented such that the semiconductor structure is grown on a gallium polarity of the seed layer;
wherein the III-nitride seed layer comprises a gallium polarity surface and an nitrogen polarity surface, and wherein the III-nitride seed layer comprises a layer grown over a growth substrate such that a surface of the seed layer closest to the growth substrate is the gallium polarity surface and a surface of the seed layer furthest from the growth substrate is the nitrogen polarity surface.
4. The method of claim 3 wherein a surface of the growth substrate over which the seed layer is grown is a nitrogen polarity surface.
5. The method of claim 4 wherein the growth substrate comprises a III-nitride material.
6. The method of claim 4 wherein the growth substrate comprises GaN.
7. The method of claim 3 wherein the seed layer is one of InGaN and AlGaN.
8. The method of claim 3 wherein the growth substrate comprises SiC.
9. A method comprising:
providing a III-nitride seed layer grown over a growth substrate, wherein the II1-nitride seed layer comprises a gallium polarity surface and a nitrogen polarity surface, and wherein the III-nitride seed layer is grown such that a surface of the seed layer closest to the growth substrate is the gallium polarity surface and a surface of the seed layer furthest from the growth substrate is the nitrogen polarity surface;
attaching the II1-nitride seed layer to a host; and
removing the growth substrate.
10. The method of claim 9 further comprising:
prior to attaching the III-nitride seed layer to a host, implanting an implant material in the III-nitride seed layer; and
heating the III-nitride seed layer such that the implant material separates a portion of the III-nitride seed layer from the growth substrate.
11. The method of claim 9 wherein a surface of the growth substrate over which the seed layer is grown is a nitrogen polarity surface.
12. The method of claim 11 wherein the growth substrate comprises a nitride material.
13. The method of claim 11 wherein the growth substrate comprises GaN.
14. The method of claim 9 wherein the seed layer is one of InGaN and AlGaN.
15. The method of claim 9 wherein the growth substrate comprises SiC.