Image sensor pixel circuit

1. A pixel circuit of an image sensor comprising:

a sense node for storing a charge transferred from one or more photodiodes; and

a source follower transistor having a gate coupled to the sense node and its source coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is directly electrically coupled to said output line.

2. The image sensor of claim 1 , wherein said source follower transistor and said read transistor are formed in a same well, the body contact of said well being electrically coupled to said output line.

3. The image sensor of claim 2 , wherein said well is surrounded by a shallow trench isolation.

4. The image sensor of claim 2 , wherein said well is surrounded by a deep trench isolation.

5. The image sensor of claim 2 , wherein the body contact of said well is formed adjacent to a source of said read transistor.

6. The image sensor of claim 2 , further comprising a reset transistor coupled between the sense node and a supply voltage, wherein the gate of the reset transistor is arranged to receive a reset voltage and a body contact of the reset transistor is electrically coupled to said output line.

7. The image sensor of claim 6 , wherein said reset transistor is formed in the same well as the source follower transistor and read transistor.

8. The image sensor of claim 1 , wherein said sense node is coupled to the one or more photodiodes via one or more transfer transistors.

9. The image sensor of claim 1 , comprising an array of said pixel circuits.

10. An electronics device comprising the image sensor of claim 1 .

11. A method of manufacturing a pixel circuit of an image sensor comprising:

forming a source follower transistor having its gate coupled to a sense node and its source coupled to an output line of the pixel circuit via a read transistor; and

forming a direct electrical coupling between a body contact of the source follower transistor and the output line.

12. The method of claim 11 , further comprising:

forming the source follower transistor and the read transistor in a same first well; and

forming an electrical coupling between a body contact of the first well and the output line.

13. The method of claim 12 , further comprising forming a shallow trench isolation structure around the first well.

14. The method of claim 12 , further comprising forming a deep trench isolation structure around the first well, wherein the deep trench isolation structure extends to an underlying insulating layer below the first well.

15. The method of claim 12 , further comprising forming the body contact of the first well adjacent to a source of the read transistor.

16. The method of claim 12 , further comprising forming a reset transistor coupled between the sense node and a supply voltage, wherein a gate of the reset transistor is arranged to receive a reset voltage and a body contact of the reset transistor is electrically coupled to the output line.

17. The method of claim 16 , further comprising forming the reset transistor in the same first well.

18. The method of claim 16 , further comprising forming the reset transistor in a second well that is separated from the first well by at least one trench isolation structure.

19. The method of claim 18 , further comprising forming an electrical coupling between a body contact of the first well and a body contact of the second well and the output line.

20. The method of claim 11 , further comprising forming a coupling between the sense node and one or more photosensors.

21. The method of claim 20 , further comprising forming one or more transfer transistors as part of the coupling between the sense node and the one or more photosensors.

22. The method of claim 11 , further comprising forming an array of the pixel circuits arranged for two-dimensional imaging.

23. A sensor circuit comprising:

a sense node for storing a charge; and

a source follower transistor having a gate coupled to the sense node and its source coupled to an output line of the sensor circuit via a read transistor, wherein a first body contact of the source follower transistor is directly electrically coupled to the output line.

24. The sensor circuit of claim 23 , further comprising a photosensor coupled to the sense node for producing the charge that is stored at the sense node.

25. The sensor circuit of claim 23 , further comprising:

a first well of a first conductivity type formed in a substrate, wherein the source follower transistor and the read transistor are formed in the first well; and

a first trench isolation structure surrounding the first well.

26. The sensor circuit of claim 25 , further comprising a first body contact formed in the first well that is electrically coupled to the output line.

27. The sensor circuit of claim 26 , wherein the first body contact is formed adjacent to a source of the read transistor.

28. The sensor circuit of claim 26 , further comprising:

a second well of the first conductivity type formed in the substrate and surrounded by a second trench isolation structure; and

a reset transistor formed in the second well, wherein the reset transistor is configured to reset a potential at the sense node.

29. The sensor circuit of claim 28 , further comprising a second body contact in the second well that is electrically coupled to the first body contact.

30. A plurality of sensor circuits as claimed in claim 23 disposed in an array.

31. The sensor circuits of claim 30 , wherein the array is configured to detect two-dimensional images.