GaN-based semiconductor light emitting device
View Patent ↗There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al x In y Ga 1-x-y N, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of In x Ga 1-x N, where 0<x<0.2, and GaN; a well layer including In x Ga 1-x N, where 0<x<1; a third barrier layer including one of In x Ga 1-x N, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of Al x In y Ga 1-x-y N, where 0<x<1, 0<y<1, and 0<x+y<1, Al x Ga 1-x N, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.
1. A semiconductor light emitting device comprising:
a substrate; and
a light emitting structure having a first semiconductor layer, an active layer and a second semiconductor layer sequentially deposited on the substrate,
wherein the active layer includes:
a first barrier layer formed on the first semiconductor layer and having an energy band higher than an energy band of a well layer;
a second barrier layer formed on the first barrier layer and having an energy band higher than an energy band of the first barrier layer;
the well layer formed on the second barrier layer and having an energy band lower than an energy band of the first and second semiconductor layers;
a third barrier layer formed on the well layer and having an energy band higher than an energy band of the well layer; and
a lattice mismatch relaxation layer formed on the third barrier, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the second semiconductor layer.
2. The semiconductor light emitting device of claim 1 , wherein a composition changes within the lattice mismatch relaxation layer.
3. The semiconductor light emitting device of claim 1 , further comprising at least one more active layer.
4. The semiconductor light emitting device of claim 1 , wherein the lattice mismatch relaxation layer is doped or undoped.
5. The semiconductor light emitting device of claim 4 , wherein a lattice mismatch relaxation layer is Si-doped.
6. The semiconductor light emitting device of claim 1 , wherein the active layer further comprises a fourth barrier layer formed between the third barrier layer and the lattice mismatch relaxation layer, the fourth barrier layer comprising Al x In y Ga 1-x-y N, where 0<x<1, 0<y<1, and 0<x+y<1.