Methods of sputtering using a non-bonded semiconducting target
View Patent ↗A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
1. A method of sputtering a plurality of non-bonded semiconducting targets, the method comprising:
removably inserting a plurality of semiconducting targets into a slide track of a sputtering cathode to expose sputtering surfaces of the plurality of semiconducting targets, wherein the sputtering cathode comprises a backing plate such that the plurality of semiconducting targets is positioned adjacent to a backing plate and non-bonded thereto, and wherein a biasing member is positioned between the backing plate and the plurality of semiconducting targets to provide a force that pushes the plurality of semiconducting targets against brackets of the slide track;
heating the plurality of semiconducting targets to a sputtering temperature via heating elements positioned within the sputtering cathode; and,
contacting the sputtering surfaces of the plurality of semiconducting targets with a plasma such that atoms are ejected from the sputtering surfaces of the plurality of semiconducting targets.
2. The method of claim 1 , wherein the sputtering temperature is about 100° C. to about 1,000° C.
3. The method of claim 1 , further comprising:
monitoring the sputtering temperature of the sputtering surfaces of the plurality of semiconducting targets.
4. The method of claim 3 , wherein the sputtering temperature is monitored via a temperature sensor positioned within the sputtering cathode.
5. The method of claim 4 , further comprising:
adjusting the sputtering temperature of the sputtering surfaces of the plurality of semiconducting targets by increasing or decreasing the output of the heating elements.
6. The method of claim 1 , wherein the plurality of semiconducting targets comprises cadmium sulfide.
7. A method of sputtering a plurality of non-bonded semiconducting targets, the method comprising:
removably inserting a plurality of semiconducting targets into a slide track of a sputtering cathode to expose sputtering surfaces of the plurality of semiconducting targets, wherein the sputtering cathode comprises a backing plate such that the plurality of semiconducting targets is positioned adjacent to a backing plate and non-bonded thereto;
inserting biasing members between the backing plate and the plurality of semiconducting targets to provide a force that pushes the plurality of semiconducting targets against brackets of the slide track; and,
contacting the sputtering surfaces of the plurality of semiconducting targets with a plasma such that the plurality of semiconducting targets increases in temperature upon initial contact with the plasma.
8. The method of claim 7 , further comprising:
allowing the plurality of semiconducting targets to establish an equilibrium sputtering temperature during sputtering.
9. The method of claim 7 , wherein the sputtering temperature is about 100° C. to about 1,000° C.
10. The method of claim 7 , further comprising:
monitoring the sputtering temperature of sputtering surfaces of the plurality of semiconducting targets.
11. The method of claim 10 , wherein the sputtering temperature is monitored via a temperature sensor positioned within the sputtering cathode.
12. The method of claim 11 , further comprising:
adjusting the sputtering temperature of the sputtering surfaces of the plurality of semiconducting targets by increasing or decreasing the output of heating elements.
13. The method of claim 7 , wherein the plurality of semiconducting targets comprises cadmium sulfide.
14. A method of replacing a depleted non-bonded semiconducting target from a sputtering cathode, the method comprising:
removing an end bracket from a slide track of the sputtering cathode to provide an open end of the slide track, wherein the slide track is defined between a backing plate, a first bracket, and a second bracket;
removing the depleted non-bonded semiconducting target out of the open end of the slide track;
inserting a replacement non-bonded semiconducting target into the slide track via the open end; and,
reattaching the end bracket onto the sputtering cathode.
15. The method of claim 14 , wherein a plurality of depleted non-bonded semiconducting targets are removed out of the open end of the slide track, and wherein a plurality of replacement non-bonded semiconducting targets are inserted into the slide track via the open end.
16. The method of claim 14 , wherein the sputtering cathode further comprises a second slide track positioned substantially parallel to the slide track.
17. The method of claim 16 , further comprising:
removing depleted non-bonded semiconducting targets from the second slide track.
18. The method of claim 14 , wherein the replacement non-bonded semiconducting target comprises cadmium sulfide.
19. The method of claim 7 , wherein the sputtering cathode is mounted vertically or mounted upside-down.