Ion implantation apparatus
View Patent ↗An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.
1. Ion implantation apparatus for implanting ions into planar substrate wafers, comprising:
an implant wheel mounted for rotation about a wheel axis; a plurality of wafer carriers distributed about a periphery of said implant wheel; a respective heat sink in each said wafer carrier for removing heat from a wafer on said carrier during an ion implantation process by said wafer being thermally coupled with said heat sink;
each of said wafer carriers having a wafer support surface in a respective wafer support plane canted inwards towards said wheel axis; and
at least one fence located at a radially outer edge of each of said carriers to prevent wafers on said carriers from sliding outwards on said carriers during rotation of said implant wheel, whereby said wafers are pressed by centrifugal force against said support surfaces,
wherein each said fence has a respective abutment surface to engage an outer edge of a wafer on said wafer carrier,
wherein said abutment surface is movable transversely relative to said respective wafer support plane as said wafer is pressed by centrifugal force against said support surface,
wherein said fence on each of said wafer carriers comprises a fence body mounted on said wafer carrier to provide said transversely movable abutment surface, said fence body being mounted to neutralize influence on said body of centrifugal force when said implant wheel is rotated, and
wherein said fence body is cylindrical, mounted for rotation about an axis in a plane parallel to said wafer support plane.
2. A method of ion implantation using an implant wheel mounted for rotation about a wheel axis with a plurality of wafer carriers distributed about a periphery of said implant wheel and a respective heat sink in each said wafer carrier for removing heat from a wafer having a surface area on said carrier, during an ion implantation process, said wafer being thermally coupled with said heat sink, in which said wafer carriers have wafer support surfaces in respective wafer support planes canted inwards towards said wheel axis, the method comprising the steps of:
mounting wafers to be implanted on said inwardly canted support surfaces of said wafer carriers; and
rotating said implant wheel about said wheel axis while applying a centripetal force to an outside edge of each wafer to prevent outward movement of wafers on said support surfaces,
wherein said centripetal force is applied without any force on said wafer in a direction transverse to said wafer support surface, so that centrifugal force acts to press said wafer against said support surface evenly over said surface area of said wafer, wherein said centripetal force is applied by the steps of:
providing an abutment surface to engage an outside edge of said wafer; and
mounting said abutment surface on said wafer carrier to resist outward movement relative to said wafer carrier and to be freely moveable in said direction transverse to said wafer support surface, wherein said abutment surface is provided on a fence body,
wherein said fence body is cylindrical, and wherein said mounting step includes:
mounting said fence body to neutralize said influence of centrifugal force on said body when said implant wheel is rotating, and
mounting said fence body for rotation about an axis in a plane parallel to said wafer support plane.
3. Ion implantation apparatus for implanting ions into planar substrate wafers, comprising:
an implant wheel mounted for rotation about a wheel axis; a plurality of wafer carriers distributed about a periphery of said implant wheel; a respective heat sink in each said wafer carrier for removing heat from a wafer on said carrier during an ion implantation process by said wafer being thermally coupled with said heat sink;
each of said wafer carriers having a wafer support surface in a respective wafer support plane canted inwards towards said wheel axis; and
at least one fence located at a radially outer edge of each of said carriers to prevent wafers on said carriers from sliding outwards on said carriers during rotation of said implant wheel, whereby said wafers are pressed by centrifugal force against said support surfaces,
wherein each said fence has a respective abutment surface to engage an outer edge of a wafer on said wafer carrier,
wherein said abutment surface is movable transversely relative to said respective wafer support plane as said wafer is pressed by centrifugal force against said support surface,
wherein said fence comprises: a fence body and a mobile mount structure mounting said fence body on said wafer carrier to enable said fence body to move and provide said transversely movable abutment surface, and
wherein each of said wafer carriers includes a beam strike shield mounted on said wafer carrier to cover a major portion of said fence body and said mobile mount structure to intercept beam ions during implanting.
4. Ion implantation apparatus as claimed in claim 3 , wherein said beam strike shield is formed as a housing enclosing said major portion of said fence body and said mobile mount structure, and wherein said housing has a radially inwardly facing window, and said fence body projects through said window.
5. A method of ion implantation using an implant wheel mounted for rotation about a wheel axis with a plurality of wafer carriers distributed about a periphery of said implant wheel and a respective heat sink in each said wafer carrier for removing heat from a wafer having a surface area on said carrier, during an ion implantation process, said wafer being thermally coupled with said heat sink, in which said wafer carriers have wafer support surfaces in respective wafer support planes canted inwards towards said wheel axis, the method comprising the steps of:
mounting wafers to be implanted on said inwardly canted support surfaces of said wafer carriers,
rotating said implant wheel about said wheel axis while applying a centripetal force to an outside edge of each wafer to prevent outward movement of wafers on said support surfaces, wherein said centripetal force is applied without any force on said wafer in a direction transverse to said wafer support surface, so that centrifugal force acts to press said wafer against said support surface evenly over said surface area of said wafer,
wherein said centripetal force is applied by the steps of:
providing an abutment surface to engage an outside edge of said wafer; and
mounting said abutment surface on said wafer carrier to resist outward movement relative to said wafer carrier and to be freely moveable in said direction transverse to said wafer support surface, wherein said abutment surface is provided on a fence body; and
wherein said mounting step includes:
mounting said fence body to neutralize said influence of centrifugal force on said body when said implant wheel is rotating; and
screening a major portion of said fence body from beam strike during implantation.