METHOD FOR FORMING A COMPOUND SEMI-CONDUCTOR THIN-FILM
A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.
1 . A photovoltaic device, comprising:
a substrate;
a first electrode disposed on the substrate;
a light absorbing layer that includes a Reacted Target Physical Deposition (RTPD) compound semiconductor thin-film; and
a second electrode disposed over the light absorbing layer.
2 . The photovoltaic device of claim 1 wherein the (RTPD) compound semiconductor thin-film includes II-VI compound semiconductor materials.
3 . The photovoltaic device of claim 2 wherein the II-VI compound semiconductor materials are selected from the group consisting of Cd—S, Cd—Se, Cd—Te, Cd—Zn—Te, Cd—Hg—Te, and Cu—In—Se.
4 . A target for use in a fabricating a thin-film, comprising:
a Reacted Target Physical Deposition (RTPD) compound semiconductor material having a prescribed bandgap.
5 . The target of claim 4 further comprising a dopant that includes an alkali or halogen element.