EXTREMELY LOW RESISTANCE MATERIALS AND METHODS FOR MODIFYING AND CREATING SAME
In some implementations of the invention, existing extremely low resistance materials (“ELR materials”) may be modified and/or new ELR materials may be created by enhancing (in the case of existing ELR materials) and/or creating (in the case of new ELR materials) an aperture within the ELR material such that the aperture is maintained at increased temperatures so as not to impede propagation of electrical charge there through. In some implementations of the invention, as long as the propagation of electrical charge through the aperture remains unimpeded, the material should remain in an ELR state; otherwise, as the propagation of electrical charge through the aperture becomes impeded, the ELR material begins to transition into a non-ELR state.
1 . A composition of matter comprising:
an ELR material having a crystalline structure with an aperture formed therein, wherein the aperture facilitates propagation of electrical charge through the crystalline structure in an ELR state; and
a modifying material bonded to the ELR material to thereby maintain the aperture of the ELR material so that the composition has an improved operating characteristic over that of the ELR material without the modifying material.
2 . The composition of claim 1 , wherein the ELR material without the modifying material has a first transition temperature and wherein the composition has a transition temperature greater than the first transition temperature.
3 . The composition of claim 1 , wherein the improved operating characteristic is an increased transition temperature of the composition relative to that of the ELR material without the modifying material.
4 . The composition of claim 1 , wherein the improved operating characteristic is a lower resistance of the composition at a given temperature relative to that of the ELR material without the modifying material.
5 . The composition of claim 1 , wherein the improved operating characteristic is an improved magnetic property of the composition relative to that of the ELR material without the modifying material.
6 . The composition of claim 1 , wherein the improved operating characteristic is an improved mechanical property of the composition relative to that of the ELR material without the modifying material.
7 . The composition of claim 1 , wherein atoms of the modifying material are bonded to atoms in the crystalline structure of the ELR material.
8 . The composition of claim 7 , wherein atoms of the modifying material are bonded to aperture atoms of the crystalline structure of the ELR material.
9 . The composition of claim 7 , wherein atoms of the modifying material are bonded to non-aperture atoms of the crystalline structure of the ELR material.
10 . The composition of claim 1 , wherein the modifying material is an oxygen bonding conductive material.
11 . The composition of claim 10 , wherein the modifying material is selected from the group consisting of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium.
12 . The composition of claim 1 , wherein the ELR material is a mixed-valence copper-oxide perovskite material.
13 . The composition of claim 10 , wherein the ELR material is a mixed-valence copper-oxide perovskite material.
14 . The composition of claim 11 , wherein the ELR material is a mixed-valence copper-oxide perovskite material.
15 . The composition of claim 1 , wherein the ELR material is a iron pnictide material.
16 . The composition of claim 10 , wherein the ELR material is a iron pnictide material.
17 . The composition of claim 11 , wherein the ELR material is a iron pnictide material.
18 . The composition of claim 1 , wherein the ELR material is magnesium diboride.
19 . The composition of claim 10 , wherein the ELR material is magnesium diboride.
20 . The composition of claim 11 , wherein the ELR material is magnesium diboride.
21 . The composition of claim 3 , wherein the increased transition temperature of at least a portion of the composition is greater than a particular temperature, wherein the particular temperature is one of the following temperatures: 200K, 210K, 220K, 230K, 240K, 250K, 260K, 270K, 280K, 290K, 300K, or 310K.
22 . The composition of claim 1 , wherein the aperture has a cross-section ranging in size from 0.200 nm to 1.000 nm.
23 . An ELR material having a transition temperature to an ELR state, the transition temperature greater than 250K.
24 . The ELR material of claim 23 , wherein the transition temperature is greater than one of the following temperatures: 260K, 270K, 280K, 290K, 300K, or 310K.
25 . The ELR material of claim 23 , wherein the ELR material has a crystalline structure with apertures formed therein, at least one of the apertures maintained at a temperature greater than or equal to the transition temperature, the at least one of the apertures propagating electric charge through the crystalline structure in the ELR state.
26 . The ELR material of claim 24 , wherein the ELR material has a crystalline structure with apertures formed therein, at least one of the apertures maintained at a temperature greater than or equal to the transition temperature, the at least one of the apertures propagating electric charge through the crystalline structure in the ELR state.
27 . A method comprising:
layering a modifying material with an ELR material to form a modified ELR material, the ELR material having a crystalline structure with at least one aperture formed therein, wherein the at least one aperture facilitates propagation of electrical charge through the crystalline structure in an ELR state, and wherein the modified ELR material has an aperture that is maintained at temperatures greater than the at least one aperture of the ELR material.
28 . The method of claim 27 , wherein the modifying material is layered onto the ELR material.
29 . The method of claim 28 , wherein the modifying material is deposited onto the ELR material.
30 . The method of clam 27 , wherein the ELR material is layered onto the modifying material.
31 . The method of claim 30 , wherein the ELR material is deposited onto the modifying material.
32 . The method of claim 28 , wherein the ELR material is bonded to the modifying material.
33 . The method of claim 30 , wherein the ELR material is bonded to the modifying material.
34 . The method of claim 28 , wherein atoms on a face of the ELR material are bonded to atoms of the modifying material.
35 . The method of claim 34 , wherein the face is parallel to an ab-plane of the ELR material.
36 . The method of claim 35 , wherein the face is parallel to an a-plane of the ELR material.
37 . The method of claim 35 , wherein the face is parallel to a b-plane of the ELR material.
38 . The method of claim 30 , wherein atoms on a face of the ELR material are bonded to atoms of the modifying material.
39 . The method of claim 38 , wherein the face is parallel to an ab-plane of the ELR material.
40 . The method of claim 39 , wherein the face is parallel to an a-plane of the ELR material.
41 . The method of claim 39 , wherein the face is parallel to a b-plane of the ELR material.
42 . The method of claim 27 , wherein the at least one aperture and the aperture each have a cross-section ranging in size from 0.200 nm to 1.000 nm.
43 . The method of claim 27 , wherein the ELR material is a superconducting material.
44 . The method of claim 43 , wherein the ELR material is a mixed-valence copper-oxide perovskite material.
45 . The method of claim 43 , wherein the ELR material is an iron pnictide material.
46 . The method of claim 43 , wherein the ELR material is magnesium diboride.
47 . A method comprising:
maintaining an aperture formed within a crystalline structure of an ELR material in an ELR state at temperatures greater than 250K.
48 . The method of claim 44 , wherein the temperature is one of the following temperatures: 260K, 270K, 280K, 290K, 300K, or 310K.