Method of fabricating bottom chassis, bottom chassis fabricated by the method of fabricating the same, method of fabricating liquid crystal display, and liquid crystal display fabricated by the method of fabricating the same

1. A method, comprising:

forming a chassis using a steel plate having a thickness in the range of about 0.5 mm to 0.9 mm, the steel plate having a stack structure comprising an inner layer, an electro-galvanized layer formed on the inner layer, and a polymer chromium (Cr)-free contamination resistant layer formed on the electro-galvanized layer, wherein the inner layer comprises approximately 0.001 to 0.1 weight percent (wt. %) carbon (C), approximately 0.002 to 0.05 wt. % silicon (Si), approximately 0.28 to 2.0 wt. % manganese (Mn), iron (Fe), and other impurities; and

providing a burring part by performing a burring process and a tapping process on the chassis for inserting a bolt for an engagement.

2. The method of claim 1 , wherein the burring process comprises forming a piercing hole in the chassis, positioning a burring die having an opening with a diameter greater than a diameter of the piercing hole on one surface of the chassis, wherein the piercing hole and the opening overlap each other, and pushing a burring tool having a diameter greater than the diameter of the piercing hole into the piercing hole, the insertion being performed from the other surface toward the one surface of the chassis.

3. The method of claim 2 , wherein the bolt is an M3 bolt, the diameter of the piercing hole is in the range from about 1.0 mm to about 1.4 mm, and the diameter of the opening on the burring die is in the range from about 3.2 mm to about 3.6 mm.

4. The method of claim 3 , wherein the burring part has a height ranging from about 0.9 mm to about 1.3 mm.

5. The method of claim 3 , wherein the chassis has a protrusion portion projecting from the one surface towards the other surface, and the burring part is formed in the protrusion portion, wherein the height of the burring part decreases as the height of the protrusion portion increases.

6. The method of claim 2 , wherein the bolt is an M4 bolt, the diameter of the piercing hole is in the range from about 1.4 mm to about 1.8 mm, and the diameter of the opening on the burring die is in the range from about 4.2 mm to about 4.6 mm.

7. The method of claim 6 , wherein the burring part has a height ranging from about 1.2 mm to about 1.6 mm.

8. The method of claim 6 , wherein the chassis has a protrusion portion projecting from one surface to other surface, and the burring part is formed in the protrusion portion, wherein the height of the burring part decreases as the height of the protrusion portion increases.

9. The method of claim 2 , wherein the steel plate has a thickness of about 0.6 mm, the bolt is an M3 bolt, the diameter of the piercing hole is about 1.2 mm, and the diameter of the opening on the burring die is about 3.4 mm.

10. The method of claim 9 , wherein the burring part has a height of about 1.1 mm.

11. The method of claim 2 , wherein the steel plate has a thickness of about 0.6 mm, the bolt is an M4 bolt, the diameter of the piercing hole is about 1.6 mm, and the diameter of the opening on the burring die is about 4.4 mm.

12. The method of claim 11 , wherein the burring part has a height of about 1.4 mm.

13. A chassis, comprising:

a steel plate having a thickness in the range of approximately 0.5 mm to 0.9 mm, the steel plate having a stack structure comprising an inner layer containing approximately 0.001 to 0.1 weight percent (wt. %) carbon (C), approximately 0.002 to 0.05 wt. % silicon (Si), approximately 0.28 to 2.0 wt. % manganese (Mn), iron (Fe), and other impurities, wherein an electro-galvanized layer formed on the inner layer, and a polymer chromium (Cr)-free contamination resistant layer formed on the electro-galvanized layer, and wherein the chassis comprises a burring part formed to receive a bolt for an engagement.

14. The chassis of claim 13 , wherein the bolt is an M3 bolt, and the burring part is formed by piercing hole formed in the chassis having a diameter in the range from about 1.0 mm to about 1.4 mm, and a burring die with an opening overlapping the piercing hole and having a diameter in the range from about 3.2 mm to about 3.6 mm.

15. The chassis of claim 14 , wherein the burring part has a height ranging from about 0.9 mm to about 1.3 mm.

16. The chassis of claim 13 , wherein the bottom chassis has a protrusion portion projecting from one surface to the other surface, and the burring part is formed in the protrusion portion.

17. The chassis of claim 13 , wherein the bolt is an M4 bolt, and the burring part is formed by piercing hole formed in the chassis having a diameter in the range from about 1.4 mm to about 1.8 mm, and a burring die with an opening overlapping the piercing hole and having a diameter in the range from about 4.2 mm to about 4.6 mm.

18. The chassis of claim 17 , wherein the burring part has a height ranging from about 1.2 mm to about 1.6 mm.

19. A liquid crystal display (LCD), comprising:

a bottom chassis having a thickness in the range of about 0.5 mm to 0.9 mm, the bottom chassis having a stack structure comprising an inner layer containing about 0.001 to 0.1 weight percent (wt. %) carbon (C), about 0.002 to 0.05 wt. % silicon (Si), about 0.28 to 2.0 wt. % manganese (Mn), balance iron (Fe), and other impurities, wherein an electro-galvanized layer disposed on the inner layer, and a polymer chromium (Cr)-free contamination resistant layer disposed on the electro-galvanized layer, wherein the bottom chassis comprises a burring part formed to engage an object with the burring part via a hole formed in the object.

20. The method of claim 1 , wherein the tensile strength of the inner layer is about 300 MPa to about 500 MPa.

21. The chassis of claim 13 , wherein the tensile strength of the inner layer is about 300 MPa to about 500 MPa.

22. The LCD of claim 19 , wherein the tensile strength of the inner layer is about 300 MPa to about 500 MPa.