Organic light emitting display device and method of fabricating the same

1. A method of fabricating an organic light emitting display device, comprising:

forming a first electrode on a substrate;

forming an inorganic pixel defining layer on the substrate having the first electrode;

forming an opening in the inorganic pixel defining layer for exposing at least a portion of the first electrode;

forming an organic layer having at least an organic emission layer on the first electrode; and

forming a second electrode on the organic layer,

wherein the inorganic pixel defining layer is formed by an annealing process after applying a solution using a coating method, and the inorganic pixel defining layer is about 1,000 Å to about 10,000 Å thick.

2. The method of claim 1 , wherein the inorganic pixel defining layer is formed of a silicon oxide (SiO 2 ) layer.

3. A method of fabricating an organic light emitting display device, comprising:

forming a first electrode on a substrate;

forming an inorganic pixel defining layer on the substrate having the first electrode by coating a solution of methyl siloxane dissolved in propylene glycol monomethyl ether acetate (PGMEA) solvent or a solution of hydrogen silsesquioxane (HSQ) dissolved in PGMEA solvent, and then performing an annealing process;

forming an opening in the inorganic pixel defining layer for exposing at least a portion of the first electrode;

forming an organic layer having at least an organic emission layer on the first electrode; and

forming a second electrode on the organic layer.

4. The method of claim 3 , wherein the solution is a solution of methyl siloxane 10 wt %˜20 wt % dissolved in PGMEA solvent or a solution of HSQ 5 wt %˜35 wt % dissolved in PGMEA solvent.

5. The method of claim 1 , wherein the coating method is performed at a spin speed of about 10 rpm to about 1,300 rpm for about 1 second to about 30 seconds.

6. The method of claim 3 , wherein the inorganic pixel defining layer is about 1,000 Å to about 10,000 Å thick.

7. The method of claim 1 , wherein the inorganic pixel defining layer is annealed at a temperature of about 200° C. to about 300° C.

8. The method of claim 1 , wherein the annealing process is performed for about 30 minutes to about 1 hour.

9. The method of claim 1 , wherein the inorganic pixel defining layer is formed of a silicon oxide (SiO 2 ) layer by removing H 2 O contained in the silicon oxide (SiO 2 ) layer through an annealing process.

10. The method of claim 1 , wherein the opening of the inorganic pixel defining layer is formed by a dry etching process.

11. The method of claim 10 , wherein the dry etching process is performed using a plasma etching method.

12. A method of fabricating an organic light emitting display device, comprising:

forming a first electrode on a substrate;

forming an inorganic pixel defining layer on the substrate having the first electrode;

forming an opening in the inorganic pixel defining layer for exposing at least a portion of the first electrode;

forming an organic layer having at least an organic emission layer on the first electrode; and

forming a second electrode on the organic layer,

wherein the inorganic pixel defining layer is made of silicon on glass (SOG), and

wherein the inorganic pixel defining layer is formed by an annealing process after applying, using a coating method, a solution of methyl siloxane dissolved in propylene glycol monomethyl ether acetate (PGMEA) solvent or a solution of hydrogen silsesquioxane (HSQ) dissolved in PGMEA solvent.

13. The method of claim 12 , wherein the solution is a solution of methyl siloxane 10 wt %˜20 wt % dissolved in PGMEA solvent or a solution of HSQ 5 wt %˜35 wt % dissolved in PGMEA solvent.

14. The method of claim 12 , wherein the coating method is performed at a spin speed of about 10 rpm to about 1,300 rpm for about 1 second to about 30 seconds.

15. The method of claim 12 , wherein the inorganic pixel defining layer is annealed at a temperature of about 200° C. to about 300° C.

16. The method of claim 12 , wherein the annealing process is performed for about 30 minutes to about 1 hour.

17. The method of claim 12 , wherein the opening of the inorganic pixel defining layer is formed by a dry etching process.

18. The method of claim 17 , wherein the dry etching process is performed using a plasma etching method.