AMRPHOUS SILICON CRYSTALLIZATION APPARATUS
Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode.
1 . An amorphous silicon crystallization apparatus comprising:
a process chamber;
a substrate holder disposed in one part of the process chamber;
a power voltage application part disposed in a part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode; and
a controller for adjusting a distance between the first and second electrodes.
2 . The amorphous silicon crystallization apparatus according to claim 1 , wherein the substrate holder comprises: a substrate support for providing a space in which a substrate is seated, a holder conveyor for moving the substrate support, and a holder driver for controlling the holder conveyor.
3 . The amorphous silicon crystallization apparatus according to claim 2 , wherein the substrate support comprises at least one vacuum hole connected to a vacuum pump.
4 . The amorphous silicon crystallization apparatus according to claim 2 , wherein the substrate support comprises a plurality of sensors for detecting a size of the substrate.
5 . The amorphous silicon crystallization apparatus according to claim 4 , wherein the controller adjusts a distance between the first and second electrodes depending on the size of the substrate detected by the plurality of sensors.
6 . The amorphous silicon crystallization apparatus according to claim 4 , wherein the plurality of sensors detect a position of the substrate, and the controller adjusts positions of the first and second electrodes depending on the position of the substrate detected by the plurality of sensors.
7 . The amorphous silicon crystallization apparatus according to claim 2 , wherein the holder conveyor comprises: a first holder conveyor for moving the substrate support horizontally, and a second holder conveyor for moving the substrate support vertically.
8 . The amorphous silicon crystallization apparatus according to claim 1 , wherein the power voltage application part comprises: a first electrode conveyor for moving the first electrode, a second electrode conveyor for moving the second electrode, and a moving guide for providing moving paths of the first and second electrode conveyors.
9 . The amorphous silicon crystallization apparatus according to claim 8 , wherein the moving guide comprises a first moving guide for providing a moving path for the first electrode conveyor, and a second moving guide for providing a moving path for the second electrode conveyor,
wherein the first and second moving guides are spaced apart from each other.
10 . The amorphous silicon crystallization apparatus according to claim 9 , wherein the first and second moving guides are disposed in the same direction.
11 . The amorphous silicon crystallization apparatus according to claim 9 , wherein the first and second moving guides have guide grooves disposed in a longitudinal direction of the moving guide, and
the first and second electrode conveyors have guide rails corresponding to the guide grooves.
12 . The amorphous silicon crystallization apparatus according to claim 8 , wherein the moving guide is disposed in a direction perpendicular to a longitudinal direction of the first and second electrodes.