Microwave annealing method for device processing with plastic substrate
View Patent ↗The present invention provides a microwave annealing method for a plastic substrate. The method comprises pulsed microwave annealing to an organic photo-voltaic device to avoid warpage and degradation of the plastic substrate. Utilizing pulsed microwave annealing method can improve the wettability of the organic layer on the plastic substrate verified by contact angle measurement, and achieving the organic solar cell fabricated with higher power conversion efficiency.
1. A microwave annealing method for a plastic substrate, comprising
providing a flexible substrate;
forming an electron-hole transport layer over said flexible substrate; and
performing pulsed microwave annealing to said electrode-hole transport layer.
2. The method of claim 1 , wherein said flexible substrate has a conductive film plated thereon.
3. The method of claim 1 , wherein said flexible substrate is a plastic substrate.
4. The method of claim 1 , wherein material of said electron-hole transport layer is poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate) and related derivatives.
5. The method of claim 1 , wherein pulse frequency of said pulsed microwave annealing is about 2.0˜4.0 GHz.
6. The method of claim 1 , wherein power of said pulsed microwave annealing is smaller than 500 W.
7. The method of claim 1 , wherein heating time of said pulsed microwave annealing is 1˜60 sec/per.
8. The method of claim 1 , wherein heating time interval of said pulsed microwave annealing is 5˜500 sec/per.
9. The method of claim 1 , further comprising a step of forming an active layer on said electron-hole transport layer after said performing pulsed microwave annealing.
10. The method of claim 9 , wherein said active layer is formed of poly(3-hexyl thiophene) as a donor and [6,6]-phenyl-C61-butyric acid methyl ester as an acceptor.
11. The method of claim 9 , further comprising a second pulsed microwave annealing to said active layer.
12. The method of claim 11 , wherein pulse frequency of said second pulsed microwave annealing is about 2.0˜4.0 GHz.
13. The method of claim 11 , wherein power of said second pulsed microwave annealing is smaller than 500 W.
14. The method of claim 11 , wherein heating time of said second pulsed microwave annealing is 1˜60 sec/per.
15. The method of claim 11 , wherein heating time interval of said second pulsed microwave annealing is 5˜500 sec/per.
16. The method of claim 9 , further comprising a step of forming an electrode on said active layer.
17. The method of claim 16 , wherein the electrode is a metal electrode.