Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
View Patent ↗A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.
1. A photovoltaic device comprising a flexible substrate, a molybdenum back-contact layer, a Ib-IIIb-VIb solar absorber layer, a heterojunction partner layer, a buffer layer, a transparent top contact layer, and a metallic top contact, wherein the solar absorber layer comprises gallium and indium, copper, selenium, silver, and tellurium and has a composition graded such that portions of the absorber layer near the back-contact layer are enriched in tellurium and depleted in selenium relative to portions of the absorber layer near the heterojunction partner layer;
wherein the solar absorber layer has composition graded such that portions of the absorber layer near the back-contact layer are enriched in copper and depleted in silver relative to portions of the absorber layer near the heterojunction partner layer.
2. The photovoltaic device of claim 1 wherein the solar absorber layer has composition graded in ratio of gallium to indium such that portions of the absorber layer near the back-contact layer have a different ratio of gallium to indium relative to portions of the absorber layer near the heterojunction partner layer.
3. A photovoltaic device comprising a flexible substrate, a molybdenum back-contact layer, a Ib-IIIb-VIb solar absorber layer, a heterojunction partner layer, a buffer layer, a transparent top contact layer, and a metallic top contact, wherein the solar absorber layer comprises gallium and indium, copper, selenium, silver, and tellurium and has a composition graded such that portions of the absorber layer near the back-contact layer are enriched in tellurium and depleted in selenium relative to portions of the absorber layer near the heterojunction partner layer;
wherein the solar absorber layer further comprises aluminum, and has composition graded in aluminum concentration such that portions of the absorber layer near the back-contact layer have substantially higher aluminum content relative to portions of the absorber layer near the heterojunction partner layer.
4. A photovoltaic device comprising a flexible substrate, a molybdenum back-contact layer, a Ib-IIIb-VIb solar absorber layer, a heterojunction partner layer, a buffer layer, a transparent top contact layer, and a metallic top contact, wherein the solar absorber layer comprises at least aluminum, indium, selenium, and silver, and has a composition graded such that portions of the absorber layer near the back-contact layer are enriched in aluminum and depleted in indium relative to portions of the absorber layer near the heterojunction partner layer;
wherein the solar absorber layer further comprises copper, and has composition graded in ratio of copper to silver such that portions of the absorber layer near the back contact layer have a higher ratio of copper to silver than portions of the absorber layer near the heterojunction partner layer.
5. The photovoltaic device of claim 4 , wherein the solar absorber layer further comprises tellurium, and has composition graded in ratio of tellurium to selenium such that portions of the absorber layer near the back-contact layer have a higher ratio of tellurium to selenium than portions of the absorber layer near the heterojunction partner layer.