Light emitting diode apparatus and manufacturing method thereof
View Patent ↗The present invention discloses a light emitting diode apparatus and a manufacturing method thereof, and more particularly to provide an AC-driven white light emitting diode apparatus comprising a plurality of groups of the AC-driven light emitting diode chips with different emission wavelengths and a plurality of groups of the DC-driven light emitting diode chips with different emission wavelengths. The AC-driven white light emitting diode apparatus manufactured by the disclosed method has the properties of high color rendering, high light emitting efficiency, and stable chromaticity coordinate.
1. An LED apparatus, comprising a lead frame; at least one group of AC-driven micro-LED chips; at least one group of DC-driven LED chips; and at least one wavelength conversion phosphor material for absorbing radiation emission of the chips; wherein the group of the AC-driven micro-LED chips and the group of DC-driven LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by an AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission of the chips thereby converting a spectral region thereof to have a different peak wavelength
wherein the group of DC-driven LED chips is composed of AlInGaN-based and InGaPN-based compound semiconductors.
2. The LED apparatus as set forth in claim 1 , wherein the group of AC-driven micro-LED chips is composed of AlInGaN-based compound semiconductors.
3. The LED apparatus as set forth in claim 1 , wherein the group of AC-driven micro-LED chips is composed of a plurality of AlInGaN-based micro-LED chips which are formed on an insulating substrate.
4. The LED apparatus as set forth in claim 1 , wherein an active region of the AlInGaN-based compound semiconductor is composed of AlInGaN and InGaN.
5. The LED apparatus as set forth in claim 1 , wherein an active region of the InGaPN-based compound semiconductor is composed of InGaPN and AlGaP.
6. The LED apparatus as set forth in claim 1 , wherein the wavelength conversion phosphor material is made of a material selected from a group consisting of Sr.sub.1−x−yBa.sub.xCa.sub.ySiO.sub.4:Eu.sup.2+F, (Sr.sub.1−x−yEu.sub.xMn.sub.y)P.sub.2+zO.sub.7:Eu.sup.2+F, (Ba,Sr,Ca)Al.sub.2O.sub.4:Eu, ((Ba,Sr,Ca)(Mg,Zn))Si.sub.2O.sub.7:Eu, SrGa.sub.2S.sub.4:Eu, ((Ba,Sr,Ca).sub.1−xEu.sub.x)(Mg,Zn).sub.1−xMn.sub.x))Al.sub.10O.sub.17, Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu,Mn, ((Ba,Sr,Ca,Mg).sub.1−xEu.sub.x).sub.2SiO.sub.4, Ca.sub.2MgSi.sub.2O.sub.7:Cl, SrSi.sub.3O.sub.8.2SrCl.sub.2:Eu, BAM:Eu, Sr-Aluminate:Eu, Thiogallate:Eu, Chlorosilicate:Eu, Borate:Ce,Tb, Sr.sub.4Al.sub.14w80.sub.25:Eu, YBO.sub.3:Ce,Tb, BaMgAl.sub.10O.sub.17:Eu,Mn, (Sr,Ca,Ba)(Al,Ga).sub.2S.sub.4:Eu, Ca.sub.2MgSi.sub.2O.sub.7:Cl,Eu,Mn, (Sr,Ca,Ba,Mg).sub.10(PO4).sub.6Cl.sub.2:Eu, ZnS:Cu,Al, (Y,Gd,Tb,Lu,Yb)(Al.sub.yGa.sub.1−y).sub.5O.sub.12:Ce, (Sr.sub.1−x−y−zBa.sub.xCa.sub.yEu.sub.z).sub.2SiO.sub.4, (Sr.sub.1−a−bCa.sub.bBa.sub.c)Si.sub.xN.sub.yO.sub.z:Eu.sub.a and Sr.sub.5(PO.sub.4).sub.3Cl:Eu.sub.a or a mixture of any combination thereof.
7. An LED apparatus, comprising a lead frame; at least one group of AlInGaN-based LED chips; at least one group of InGaPN-based LED chips; and at least one wavelength conversion phosphor material disposing on the at least one group of AlInGaN-based LED chips for absorbing radiation emission therefrom; wherein the group of the AlInGaN-based LED chips and the group of the InGaPN-based LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by an AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission from the groups of the AlInGaN-based LED chips thereby converting a spectral region thereof to have a different peak wavelength,
wherein the group of InGaPN-based LED chips is an AC-driven LED chips formed by connecting a plurality of InGaPN-based LED chips by a bridge connection.
8. The LED apparatus as set forth in claim 7 , wherein an active region of the group of AlInGaN-based LED chips is composed of AlInGaN and InGaN.
9. The LED apparatus as set forth in claim 7 , wherein an active region of the group of InGaPN-based LED chips is composed of InGaPN and AlGaP.
10. The LED apparatus as set forth in claim 7 , wherein the wavelength conversion phosphor material is made of a material selected from a group consisting of Sr.sub.1−x−yBa.sub.xCa.sub.ySiO.sub.4:Eu.sup.2+F, (Sr.sub.1−x−yEu.sub.xMn.sub.y)P.sub.2+zO.sub.7:Eu.sup.2+F, (Ba,Sr,Ca)Al.sub.2O.sub.4:Eu, ((Ba,Sr,Ca)(Mg,Zn))Si.sub.2O.sub.7:Eu, SrGa.sub.2S.sub.4:Eu, ((Ba,Sr,Ca).sub.1−xEu.sub.x)(Mg,Zn).sub.1−xMn.sub.x))Al.sub.10O.sub.17, Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu,Mn, ((Ba,Sr,Ca,Mg).sub.1−xEu.sub.x).sub.2SiO.sub.4, Ca.sub.2MgSi.sub.2O.sub.7:Cl, SrSi.sub.3O.sub.8.2SrCl.sub.2:Eu, BAM:Eu, Sr-Aluminate:Eu, Thiogallate:Eu, Chlorosilicate:Eu, Borate:Ce,Tb, Sr.sub.4Al.sub.14O.sub.25:Eu, YBO.sub.3:Ce,Tb, BaMgAl.sub.10O.sub.17:Eu,Mn, (Sr,Ca,Ba)(Al,Ga).sub.2S.sub.4:Eu, Ca.sub.2MgSi.sub.2O.sub.7:Cl,Eu,Mn, (Sr,Ca,Ba,Mg).sub.10(PO4).sub.6Cl.sub.2:Eu, ZnS:Cu,Al, (Y,Gd,Tb,Lu,Yb)(Al.sub.yGa.sub.1−y).sub.5O.sub.12:Ce, (Sr.sub.1−x−y−zBa.sub.xCa.sub.yEu.sub.z).sub.2SiO.sub.4, (Sr.sub.1−a−bCa.sub.bBa.sub.c)Si.sub.xN.sub.yO.sub.z:Eu.sub.a and Sr.sub.5(PO.sub.4).sub.3Cl:Eu.sub.a or a mixture of any combination thereof.
11. An LED apparatus manufacturing method, comprising the steps of: providing a lead frame; mounting at least one group of AC-driven micro-LED chips and at least one group of DC-driven LED chips on the lead frame; electrically connecting the groups of the AC-driven micro-LED chips and the DC-driven LED chips; and providing a mixed resin comprising at least one wavelength conversion phosphor material formed over the groups of LED chips,
wherein the group of DC-driven LED chips is composed of InGaPN-based compound semiconductors.
12. The LED apparatus manufacturing method as set forth in claim 11 , wherein the group of AC-driven micro-LED chips is composed of AlInGaN-based compound semiconductors.
13. The LED apparatus manufacturing method as set forth in claim 12 , wherein an active region of the AC-driven micro-LED chips is composed of AlInGaN and InGaN.
14. The LED apparatus manufacturing method as set forth in claim 11 , wherein an active region of the DC-driven LED chips is composed of InGaPN and AlGaP.
15. The LED apparatus manufacturing method as set forth in claim 11 , further comprising a step of electrically connecting the individual AC-driven micro-LED chips by a cascading method.
16. The LED apparatus manufacturing method as set forth in claim 15 , further comprising a step of electrically connecting the individual DC-driven LED chips by a bridge method.
17. The LED apparatus manufacturing method as set forth in claim 11 , wherein the wavelength conversion phosphor material is made of a material selected from a group consisting of Sr.sub.1−x−yBa.sub.xCa.sub.ySiO.sub.4:Eu.sup.2+F, (Sr.sub.1−x−yEu.sub.xMn.sub.y)P.sub.2+zO.sub.7:Eu.sup.2-FF, (Ba,Sr,Ca)Al.sub.2O.sub.4:Eu, ((Ba,Sr,Ca)(Mg,Zn))Si.sub.2O.sub.7:Eu, SrGa.sub.2S.sub.4:Eu, ((Ba,Sr,Ca).sub.1−xEu.sub.x)(Mg,Zn).sub.1−xMn.sub.x))Al.sub.10O.sub.17, Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu,Mn, ((Ba,Sr,Ca,Mg).sub.1−xEu.sub.x).sub.2SiO.sub.4, Ca.sub.2MgSi.sub.2O.sub.7:Cl, SrSi.sub.3O.sub.8.2SrCl.sub.2:Eu, BAM:Eu, Sr-Aluminate:Eu, Thiogallate:Eu, Chlorosilicate:Eu, Borate:Ce,Tb, Sr.sub.4Al.sub.14O.sub.25:Eu, YBO.sub.3:Ce,Tb, BaMgAl.sub.10O.sub.17:Eu,Mn, (Sr,Ca,Ba)(Al,Ga).sub.2S.sub.4:Eu, Ca.sub.2MgSi.sub.2O.sub.7:Cl,Eu,Mn, (Sr,Ca,Ba,Mg).sub.10(PO4).sub.6Cl.sub.2:Eu, ZnS:Cu,Al, (Y,Gd,Tb,Lu,Yb)(Al.sub.yGa.sub.1−y).sub.5O.sub.12:Ce, (Sr.sub.1−x−y−zBa.sub.xCa.sub.yEu.sub.z).sub.2SiO.sub.4, (Sr.sub.1−a−bCa.sub.bBa.sub.c)Si.sub.xN.sub.yO.sub.z:Eu.sub.a and Sr.sub.5(PO.sub.4).sub.3Cl:Eu.sub.a or a mixture of any combination thereof.