Semiconductor composite apparatus, LED, LED printhead, and image forming apparatus

1. A semiconductor composite apparatus, comprising:

a substrate;

an electrically conductive layer formed on said substrate, said electrically conductive layer comprises a first electrically conductive material;

a planarizing layer formed on a side of said electrically conductive layer opposite said substrate, said planarizing layer comprises a second electrically conductive material different from the first electrically conductive material and including a planarized surface;

a semiconductor thin film bonded on the planarized surface, said semiconductor thin film including a light emitting element and being in direct contact with the planarized surface;

wherein said planarized surface has a flatness of less than 5 nm, and said second electrically conductive material comprises one of an organic electrically conductive material and a transparent electrically conductive material.

2. The semiconductor composite apparatus according to claim 1 , wherein said planarizing layer has a specific resistance of less than 5×10 −3 Ωcm.

3. A semiconductor composite apparatus, comprising:

a substrate;

an electrically conductive layer formed on said substrate;

a planarizing layer formed on a side of said electrically conductive layer opposite said substrate, said planarizing layer being electrically conductive and including a planarized surface; and

a semiconductor thin film formed on a side of said planarizing layer opposite said electrically conductive layer, said semiconductor thin film including a light emitting element and being in direct contact with the planarized surface;

wherein said planarizing layer and said electrically conductive layer comprises different materials;

wherein said semiconductor thin film includes a first surface in contact with the planarized surface of said planarizing layer, said planarizing layer includes a second surface, and said electrically conductive layer includes a third surface in contact with the second surface; and

wherein the planarized surface is larger in area than the first surface, and the second surface is smaller in area than the third surface.

4. A semiconductor composite apparatus, comprising:

a substrate;

an electrically conductive layer formed on said substrate;

a planarizing layer formed on a side of said electrically conductive layer opposite said substrate, said planarizing layer being electrically conductive and including a planarized surface; and

a semiconductor thin film formed on a side of said planarizing layer opposite said electrically conductive layer, said semiconductor thin film including a light emitting element and being in direct contact with the planarized surface;

wherein said planarizing layer and said electrically conductive layer comprises different materials; and

wherein an insulating layer is formed between said planarizing layer and said electrically conductive layer, the insulating layer including an opening formed therethrough, said planarizing layer contacting said electrically conductive layer through the openings.

5. The semiconductor composite apparatus according to claim 1 , wherein the organic electrically conductive material is one selected from the group consisting of polyacetylene, polypyrrole, polythiophene, polyparaphenylene, poly p-phenylenevinylene, polynaphthalene vinylene, polyaniline, and polyethylene terephthalate.

6. The semiconductor composite apparatus according to claim 1 , wherein the organic electrically conductive material is doped with a dopant.

7. The semiconductor composite apparatus according to claim 6 , wherein the dopant is one selected from the group consisting of halogens, Lewis acids, proton acids, transition metal halides, alkaline metals, and alkylammonium ions.

8. The semiconductor composite apparatus according to claim 1 , wherein the transparent electrically conductive material is a metal oxide.

9. The semiconductor composite apparatus according to claim 8 , wherein the metal oxide is one selected from the group consisting of indium/tin oxide (ITO), zinc oxide (ZnO), and a conductive metal oxide containing Cu, Sr, Bi, Ca, Y, or Rb.

10. The semiconductor composite apparatus according to claim 1 , wherein said electrically conductive layer contains one selected from the group of a precious metal and a precious metal alloy.

11. The semiconductor composite apparatus according to claim 10 , wherein said electrically conductive layer contains one selected from the group of Au and an alloy containing Au.

12. The semiconductor composite apparatus according to claim 1 , wherein said electrically conductive layer contains Al.