SPUTTERING APPARATUS
A sputtering apparatus that is capable of uniformly depositing an ultra-low concentration metal catalyst on a substrate having an amorphous silicon layer in order to crystallize the amorphous silicon layer. The sputtering apparatus includes a process chamber, a metal target located inside the process chamber, a substrate holder located opposite the metal target, and a vacuum pump connected with an exhaust pipe of the process chamber. An area of the metal target is more than 1.3 times an area of a substrate placed on the substrate holder.
1 . A sputtering apparatus comprising:
a process chamber;
a metal target located inside the process chamber;
a substrate holder located opposite the metal target to hold a substrate; and
a vacuum pump connected with an exhaust pipe of the process chamber,
wherein an area of the metal target is more than 1.3 times an area of the substrate placed on the substrate holder.
2 . The sputtering apparatus according to claim 1 , wherein the area of the metal target ranges from 1.3 times to 3 times the area of the substrate.
3 . The sputtering apparatus according to claim 1 , further comprising a first shield, which is located around the metal target and controls a flow direction of a metal catalyst discharged from the metal target.
4 . The sputtering apparatus according to claim 1 , further comprising a second shield, which surrounds a plasma generating region between the metal target and the substrate holder.
5 . The sputtering apparatus according to claim 4 , wherein the process chamber includes:
a depositing region which is surrounded by the second shield and in which a sputtering process is performed;
a substrate carrying region through which the substrate is carried into and out of the process chamber; and
a transfer unit configured to transfer the substrate holder between the depositing region and the substrate carrying region.
6 . The sputtering apparatus according to claim 4 , further comprising an intake pipe configured to introduce a reaction gas for generating plasma into the process chamber, wherein the intake pipe introduces the reaction gas into a space between the process chamber and the second shield.
7 . The sputtering apparatus according to claim 6 , wherein the reaction gas includes argon gas.
8 . The sputtering apparatus according to claim 1 , wherein the substrate holder includes a clamping member clamping the substrate.
9 . The sputtering apparatus according to claim 8 , wherein the clamping member is located to surround an edge of the substrate.
10 . The sputtering apparatus according to claim 1 , wherein the metal target includes nickel.
11 . The sputtering apparatus according to claim 1 , wherein the process chamber includes a first electrode interposed between the metal target and the process chamber and a second electrode installed in the substrate holder, and the first and second electrodes are supplied with voltages having different polarities, respectively.
12 . The sputtering apparatus according to claim 11 , wherein the second electrode is connected to a reference power supply, and the first electrode is connected to a power supply that supplies direct current (DC) power.
13 . A sputtering apparatus comprising:
a process chamber;
a metal target located inside the process chamber;
a substrate;
a substrate holder located opposite the metal target to hold the substrate; and
a vacuum pump connected with an exhaust pipe of the process chamber,
wherein an area ratio of the metal target to the substrate is in a range of equal to or greater than 1.3 to less than or equal to 3.0.
14 . The sputtering apparatus according to claim 13 , further comprising a first shield, which is located around the metal target and controls a flow direction of a metal catalyst discharged from the metal target.
15 . The sputtering apparatus according to claim 13 , further comprising a second shield, which surrounds a plasma generating region between the metal target and the substrate holder.
16 . The sputtering apparatus according to claim 15 , wherein the process chamber includes:
a depositing region which is surrounded by the second shield and in which a sputtering process is performed;
a substrate carrying region through which the substrate is carried into and out of the process chamber; and
a transfer unit configured to transfer the substrate holder between the depositing region and the substrate carrying region.
17 . The sputtering apparatus according to claim 15 , further comprising an intake pipe configured to introduce a reaction gas for generating plasma into the process chamber, wherein the intake pipe introduces the reaction gas into a space between the process chamber and the second shield.
18 . The sputtering apparatus according to claim 13 , wherein the process chamber includes a first electrode interposed between the metal target and the process chamber and a second electrode installed in the substrate holder, and the first and second electrodes are supplied with voltages having different polarities, respectively.
19 . The sputtering apparatus according to claim 18 , wherein the second electrode is connected to a reference power supply, and the first electrode is connected to a power supply that supplies direct current (DC) power.
20 . The sputtering apparatus according to claim 13 , wherein the metal target includes nickel.