METHOD OF ANNEALING CADMIUM TELLURIDE PHOTOVOLTAIC DEVICE
A method of manufacturing a photovoltaic device may include forming a cadmium zinc sulfide layer on a substrate; depositing a cadmium telluride layer on the cadmium zinc sulfide layer; contacting a cadmium chloride to the cadmium telluride layer; and annealing one or more layers, where the one or more layers includes at least the cadmium telluride layer.
1 . A method of manufacturing a photovoltaic device, the method comprising:
forming a cadmium zinc sulfide layer on a substrate;
depositing a cadmium telluride layer on the cadmium zinc sulfide layer;
contacting a cadmium chloride to the cadmium telluride layer; and
annealing one or more layers, the one or more layers comprising at least the cadmium telluride layer.
2 . The method of claim 1 , wherein the annealing comprises heating at least the cadmium telluride layer above about 380 C.
3 . The method of claim 2 , wherein the annealing comprises heating at least the cadmium telluride layer in a range of about 400 C to about 600 C.
4 . The method of claim 3 , wherein the annealing comprises heating at least the cadmium telluride layer in a range of about 410 C to about 500 C.
5 . The method of claim 1 , wherein the annealing comprises heating at least the cadmium telluride layer above about 400 C.
6 . The method of claim 1 , wherein the annealing comprises heating at least the cadmium telluride layer below about 600 C.
7 . The method of claim 1 , wherein the annealing comprises heating at least the cadmium telluride layer for about 5 to about 60 minutes.
8 . The method of claim 7 , wherein the annealing comprises heating at least the cadmium telluride layer for about 10 to about 50 minutes.
9 . The method of claim 8 , wherein the annealing comprises heating at least the cadmium telluride layer for about 20 to about 30 minutes.
10 . The method of claim 1 , wherein the substrate comprises a transparent conductive oxide stack on a soda-lime glass, the transparent conductive oxide stack comprising one or more barrier layers, a transparent conductive oxide layer on the one or more barrier layers, and a buffer layer on the transparent conductive oxide layer.
11 . The method of claim 1 , wherein the contacting comprises physical vapor deposition.
12 . The method of claim 11 , wherein the contacting occurs in a vacuum.
13 . A photovoltaic device, comprising a cadmium telluride layer on a cadmium zinc sulfide layer, wherein the cadmium telluride layer is in at least partial contact with a cadmium chloride.
14 . The photovoltaic device of claim 13 , wherein the cadmium zinc sulfide layer has about 20 to about 40% zinc.
15 . The photovoltaic device of claim 13 , further comprising a cadmium zinc telluride layer between the cadmium zinc sulfide layer and the cadmium telluride layer.
16 . The photovoltaic device of claim 15 , wherein the cadmium zinc telluride layer has a zinc content of about 2% to about 10%.
17 . The photovoltaic device of claim 16 , wherein the cadmium zinc telluride layer has a zinc content of about 4% to about 8%.
18 . The photovoltaic device of claim 17 , wherein the cadmium zinc telluride layer has a zinc content in a range of about 5% to about 6%.
19 . The photovoltaic device of claim 13 , further comprising a transparent conductive oxide stack on a substrate, the transparent conductive oxide stack comprising one or more barrier layers, a transparent conductive oxide layer on the one or more barrier layers, and a buffer layer on the transparent conductive oxide layer, wherein the cadmium zinc sulfide layer is positioned on the transparent conductive oxide stack.