Semiconductor and optoelectronic devices
View Patent ↗A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).
1. A method of forming a display device comprising a plurality of pixels controlled by transistors, the method comprising:
activating dopants in a monocrystalline layer, wherein said dopants form activated dopant regions,
subsequently using ion-cut to transfer said monocrystalline layer onto a glass or plastic substrate, and then
forming said transistors comprising said monocrystalline layer,
wherein forming said transistors comprises:
forming a gate, and
forming a source and drain from said activated dopant regions,
wherein said transistors are processed on said glass or plastic substrate at a process temperature of less than about 400° C.
2. A method for forming a display device according to claim 1 , wherein said display comprises at least one mono-crystallized layer transferred using ion-cut.
3. A method for forming a display device according to claim 1 , further comprising: etching said display to define a plurality of pixels.