NOVEL SEMICONDUCTOR AND OPTOELECTRONIC DEVICES
A light-emitting integrated wafer structure, comprising: three overlying layers, wherein each of the three overlying layers emits light at a different wavelength and wherein at least one of the three overlying layers is transferred to the light-emitting integrated wafer structure using one of atomic species implants assisted cleaving, laser lift-off, etch-back, or chemical-mechanical-polishing (CMP).
1 . A light-emitting integrated wafer structure, comprising:
three substantially vertically overlying crystalline layers,
wherein each of said three crystalline layers emits light at a different wavelength;
a fourth crystalline layer overlying said three crystalline layers, said fourth crystalline layer comprising single crystal transistors; and
at least ten individual LED pixels, wherein said at least ten individual LED pixels share one substrate and are separated by etching.
2 . A light-emitting integrated wafer structure according to claim 1 , wherein at least two of said three substantially vertically overlying crystalline transferred layers are transferred by using atomic species implants assisted cleaving.
3 . A light-emitting integrated wafer structure according to claim 1 , wherein at least one of said three substantially vertically overlying crystalline layers is less than 50 microns thick.
4 . A light-emitting integrated wafer structure according to claim 1 , wherein at least two of said three substantially vertically overlying crystalline layers are less than 50 microns thick.
5 . A light-emitting integrated wafer structure according to claim 1 , wherein the three substantially vertically overlying crystalline layers are transferred by using atomic species implants assisted cleaving.
6 - 7 . (canceled)
8 . A light-emitting integrated wafer structure according to claim 1 , wherein the integrated wafer structure is diced out of a wafer.
9 - 19 . (canceled)
20 . A semiconductor manufacture, comprising:
a reusable non-transparent substrate;
a light-emitting integrated wafer structure comprising three substantially vertically overlying crystalline layers,
wherein each of said three crystalline layers emits light at a different wavelength,
wherein said light-emitting integrated wafer structure further comprises at least ten individual LED pixels, and
wherein said at least ten individual LED pixels share one substrate and are separated by etching; and
a fourth substantially vertically overlying crystalline layer overlying said three crystalline layers, said fourth crystalline layer comprising single crystal transistors.
21 . A semiconductor manufacture according to claim 20 , wherein at least two of said three substantially vertically overlying crystalline layers are transferred by using atomic species implants assisted cleaving.
22 . A semiconductor manufacture according to claim 20 , wherein at least one of said three substantially vertically overlying crystalline layers is less than 50 microns thick.
23 . A semiconductor manufacture according to claim 20 , wherein at least two of said three substantially vertically overlying crystalline layers are less than 50 microns thick.
24 . A semiconductor manufacture according to claim 20 , wherein the three substantially vertically overlying crystalline layers are transferred by using atomic species implants assisted cleaving.
25 . (canceled)
26 . A semiconductor manufacture according to claim 20 , wherein the integrated wafer structure is diced out of a wafer.
27 . (canceled)
28 . A light-emitting integrated wafer structure according to claim 1 , wherein said fourth substantially vertically overlying crystalline transferred layer is transferred by using atomic species implants assisted cleaving.
29 . A light-emitting integrated wafer structure according to claim 1 , wherein said fourth substantially vertically overlying crystalline layer is less than 50 microns thick.
30 . A semiconductor manufacture according to claim 20 , wherein said fourth substantially vertically overlying crystalline layer is transferred by using atomic species implants assisted cleaving.
31 . A semiconductor manufacture according to claim 20 , wherein said fourth substantially vertically overlying crystalline layer is less than 50 microns thick.