IP Library Granted Patent US 8,460,952
Granted Patent B2
US 8,460,952 · App. 12/903,911 · Granted Jun 11, 2013

Light emitting diode device, light emitting apparatus and method of manufacturing light emitting diode device

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Quick Facts
Patent No.
US 8,460,952
App. No.
12/903,911
Granted
Jun 11, 2013
Kind
B2
Abstract

Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.

Claims (24)

1. A method of manufacturing a light emitting diode device, the method comprising:

preparing a fluorescent substrate including a body in which fluorescent substances are dispersed within a resin, and conductive vias penetrating the body;

after the preparing of the fluorescent substrate, disposing a light emitting diode chip having a first surface and a second surface opposing the first surface, and forming first and second electrodes on the first surface, such that the first and second electrodes are connected to the conductive vias; and

after the disposing of the light emitting diode chip and the forming of the first and second electrodes, forming a resin portion to encapsulate at least side surfaces of the light emitting diode chip,

wherein the side surfaces are placed between the first and second surfaces.

2. The method of claim 1 , wherein each of the conductive vias includes a plating layer.

3. The method of claim 1 , wherein the disposing of the light emitting diode chip on the fluorescent substrate is carried out so as to cause the first surface to face the fluorescent substrate.

4. A method of manufacturing a light emitting diode device, the method comprising:

preparing a fluorescent substrate including a body in which fluorescent substrates are dispersed within a resin, and conductive vias penetrating the body;

disposing a light emitting diode chip, having a first surface on which first and second electrodes are formed, and a second surface opposing the first surface, such that the first and second electrodes are connected to the conductive vias;

underfilling a region formed by the first and second electrodes between the light emitting diode chip and the fluorescent substrate, after the disposing of the light emitting diode chip on the fluorescent substrate; and

forming a resin portion to encapsulate at least side surfaces of the light emitting diode chip, wherein the side surfaces refer to surfaces placed between the first and second surfaces.

5. The method of claim 4 , wherein, in the underfilling, an underfill resin including fluorescent substances is injected into the region.

6. The method of claim 1 , wherein the resin portion includes fluorescent substances.

7. A method of manufacturing a light emitting diode device, the method comprising:

preparing a fluorescent substrate including a body in which fluorescent substrates are dispersed within a resin, and conductive vias penetrating the body;

disposing a light emitting diode chip, having a first surface on which first and second electrodes are formed, and a second surface opposing the first surface, such that the first and second electrodes are connected to the conductive vias; and

forming a resin portion to encapsulate at least side surfaces of the light emitting diode chip, wherein the side surfaces refer to surfaces placed between the first and second surfaces, wherein the preparing of the fluorescent substrate comprises:

forming a pattern, having openings, on a carrier film;

forming conductive vias in the openings;

removing the pattern; and

forming fluorescent resins around the conductive vias on the carrier film.

8. The method of claim 7 , further comprising:

after the forming of the resin portion, removing the carrier film and exposing the conductive vias.

Assignments (1)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →