Ablative scribing of solar cell structures
View Patent ↗Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.
1. A method of forming monolithically integrated photovoltaic cells, the method comprising:
providing a substrate having one or more layers of a thin film photovoltaic stack deposited thereon,
identifying a scribe line along the substrate; and
passing a laser beam along the scribe line to remove at least one of the one or more layers along the scribe line, wherein the laser beam is passed along the front side of the substrate such that it is incident on an exposed one of the one or more layers of the thin film photovoltaic stack,
wherein the laser beam is produced from an infrared laser source and has pulse width of between about 1 and 20 picoseconds, and wherein the removal is melt-free.
2. The method of claim 1 wherein the laser beam has a pulse width of about 12-15 picoseconds.
3. The method of claim 1 wherein the wavelength of the laser beam is greater than about 1000 nm.
4. The method of claim 1 wherein the one or more layers includes a copper indium gallium selenide (CIGS) layer.
5. The method of claim 4 wherein the CIGS layer is removed along the scribe line.
6. The method of claim 4 wherein the plurality of layers includes a molybdenum (Mo) layer underlying the CIGS layer.
7. The method of claim 6 , passing a laser beam along the scribe line removes the CIGS layer along the scribe line while leaving the Mo layer substantially intact along the scribe line.
8. The method of claim 3 wherein the CIGS layer is at least about 1000 nm thick.
9. The method of claim 1 wherein the scribe line is a P1 scribe line.
10. The method of claim 1 wherein the scribe line is a P2 scribe line.
11. The method of claim 1 wherein the scribe line is a P3 scribe line.
12. A method of forming monolithically integrated photovoltaic cells, the method comprising:
providing a substrate having a plurality of layers of a thin film photovoltaic stack deposited thereon including a top layer and an underlayer,
identifying a scribe line along the substrate; and
pulsing a laser beam along the scribe line to remove the top layer along the scribe line, while leaving the underlayer intact, wherein the laser beam is passed along the front side of the substrate such that it is incident on an exposed one of plurality of layers of the thin film photovoltaic stack,
wherein an optical penetration of the laser beam pulses is greater than the thickness of the top layer, wherein the laser beam pulses have a pulse width of no more than about 20 picoseconds, and wherein the removal is melt-free.
13. The method of claim 12 wherein the thickness of the top layer is at least about 1000 nm.
14. The method of claim 12 wherein the top layer is or includes an absorber layer of the photovoltaic stack.
15. The method of claim 12 wherein the top layer includes copper indium gallium selenide (CIGS).
16. The method of claim 12 wherein the top layer is an amorphous silicon layer.
17. The method of claim 12 wherein the top layer is a cadmium telluride (CdTe) layer.
18. The method of claim 12 wherein the scribe line is a P1 scribe line.
19. The method of claim 12 wherein the scribe line is a P2 scribe line.
20. The method of claim 12 wherein the scribe line is a P3 scribe line.
21. A method of forming monolithically integrated photovoltaic cells, the method comprising:
providing a substrate having a plurality of layers of a thin film photovoltaic stack deposited thereon, including a top layer and an underlayer;
focusing a laser beam at one or more points on the substrate where the top layer is to be removed, wherein the laser beam is on the front side of the substrate such that it is incident on an exposed one of plurality of layers of the thin film photovoltaic stack; and
producing a shockwave at an interface between the top layer and the underlayer to thereby remove a portion of the top layer without forming a melt zone in the underlying layer.
22. The method of claim 1 wherein the substrate is a stainless steel substrate.
23. The method of claim 12 wherein the substrate is a stainless steel substrate.
24. The method of claim 21 wherein the substrate is a stainless steel substrate.