Light-emitting device having a roughened surface with different topographies
View Patent ↗This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
1. An optoelectronic semiconductor device comprising:
a substrate;
a semiconductor stack disposed on the substrate and having a rough surface;
an electrode layer between the semiconductor stack and the substrate;
a conductive connecting layer between the semiconductor stack and the substrate; and
a first electrode structure overlaying the semiconductor stack; wherein the rough surface comprises a first region having a first rough topography and a second region having a second rough topography different from the first rough topography.
2. The optoelectronic semiconductor device according to claim 1 , wherein the material of the conductive connecting layer comprises a silver paste or a solder metal.
3. The optoelectronic semiconductor device according to claim 1 , wherein the material of the conductive connecting layer comprises a transparent conductive oxide.
4. The optoelectronic semiconductor device according to claim 1 , wherein the material of the conductive connecting layer comprises a thin metal.
5. The optoelectronic semiconductor device according to claim 1 , wherein a dimension of the second region is smaller than a dimension of the first region.
6. The optoelectronic semiconductor device according to claim 1 , wherein the first region surrounds the first electrode structure.
7. The optoelectronic semiconductor device according to claim 1 , wherein the first electrode structure comprises an electrode layer.
8. The optoelectronic semiconductor device according to claim 7 , further comprising an ohmic contact layer formed between the semiconductor stack and the electrode layer.
9. The optoelectronic semiconductor device according to claim 7 , wherein the first electrode structure further comprises a first conductive pad.
10. The optoelectronic semiconductor device according to claim 1 , further comprising a second conductive pad on a surface of the substrate opposite to the semiconductor stack.