Vertical cavity surface emitting laser, vertical-cavity-surface-emitting-laser device, optical transmission apparatus, and information processing apparatus

1. A vertical cavity surface emitting laser comprising:

a substrate;

a first semiconductor multilayer film reflector of a first conductivity type, the first semiconductor multilayer film reflector being formed on the substrate;

an active region that is formed on the first semiconductor multilayer film reflector;

a second semiconductor multilayer film reflector of a second conductivity type that is a conductivity type different from the first conductivity type, the second semiconductor multilayer film reflector being formed on the active region, and the second semiconductor multilayer film reflector including a first surface facing the active region and a second surface opposite to the first surface;

an electrode which is formed on the second surface of the second semiconductor multilayer film reflector, and in which a light emitting aperture from which light is emitted is formed;

a solid light absorption layer that is formed on the second surface of the second semiconductor multilayer film reflector in at least a peripheral region of the light emitting aperture of the electrode, and that absorbs light having an emission wavelength; and

a light transmission layer that is composed of a material which the light having the emission wavelength is able to pass through, and that is formed on the second surface of the second semiconductor multilayer film reflector in a central region of the light emitting aperture of the electrode,

wherein a thickness of the light absorption layer and a thickness of the light transmission layer are selected so that a phase of light which emanates from the light absorption layer and a phase of light which emanates from the light transmission layer are adjusted.

2. The vertical cavity surface emitting laser according to claim 1 , wherein the thickness of the light transmission layer is in a range between about ±10% of d 1 that is obtained using an equation d 1 =(2a−1)λ/2n 1 where a is an integer, λ is an emission wavelength, and n 1 is a refractive index.

3. The vertical cavity surface emitting laser according to claim 1 , wherein a thickness d 2 of the light absorption layer in a case in which the light absorption layer is formed in the peripheral region other than the central region satisfies a condition represented by an equation (n 2 −1)×d 2 +(1−n 1 )×d 1 =λ×where b is an integer and n 2 is a refractive index.

4. The vertical cavity surface emitting laser according to claim 1 ,

wherein the light absorption layer includes a semiconductor layer having an impurity concentration which is higher than an impurity concentration of a high-refractive-index layer and a low-refractive-index layer that are included in the second semiconductor multilayer film reflector, and

wherein the electrode is electrically connected to the light absorption layer.

5. The vertical cavity surface emitting laser according to claim 1 , wherein the light absorption layer includes a layer that has a thickness smaller than a thickness of the light absorption layer in the peripheral region, and that is provided between the light transmission layer and the second semiconductor multilayer film reflector.

6. The vertical cavity surface emitting laser according to claim 1 , wherein the vertical cavity surface emitting laser further comprises an etching stopper layer that is provided between the light absorption layer and an additional light absorption layer, or between the light absorption layer and the second semiconductor multilayer film reflector, and that has an etching selection ratio with respect to the light absorption layer.

7. The vertical cavity surface emitting laser according to claim 1 , wherein the light absorption layer is covered with a protective film.

8. The vertical cavity surface emitting laser according to claim 1 ,

wherein a columnar structure extending from the second semiconductor multilayer film reflector to the first semiconductor multilayer film reflector is formed,

wherein, in the columnar structure, a current confinement layer that includes an oxidized region which is oxidized from a side wall of the columnar structure, and an electrically conductive region the periphery of which is defined by the periphery of the oxidized region is formed, and

wherein the light absorption layer is formed so that an inside diameter of the light absorption layer is smaller than a diameter of the electrically conductive region.

9. The vertical cavity surface emitting laser according to claim 8 , wherein a diameter of the electrically conductive region is about five micrometers or larger.

10. A vertical-cavity-surface-emitting-laser device comprising:

the vertical cavity surface emitting laser according to claim 1 ; and

an optical member that light emitted from the vertical cavity surface emitting laser enters.

11. An optical transmission apparatus comprising:

vertical-cavity-surface-emitting-laser device according to claim 10 ; and

a transmission unit that transmits, via an optical medium, laser light emitted from the vertical-cavity-surface-emitting-laser device.

12. An information processing apparatus comprising:

the vertical cavity surface emitting laser according to claim 1 ;

a light gathering unit that gathers, onto a recording medium, laser light which is emitted from the vertical cavity surface emitting laser; and

a mechanism that scans the laser light, which has been gathered by the light gathering unit, on the recording medium.