Fabricating electronic-photonic devices having an active layer with spherical quantum dots
View Patent ↗A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
1. An electronic-photonic device, including:
an active layer strip located on a n-doped III-V epitaxial composite semiconductor alloy buffer layer, said active layer strip including:
a plurality of spheroid-shaped quantum dots, each of said spheroid-shaped quantum dots including a multilayered concentric stack of:
a first inner III-V composite semiconductor alloy high-band-gap layer,
a III-V composite semiconductor alloy well layer on said first inner III-V composite semiconductor alloy high-band-gap layer, and
a second outer III-V composite semiconductor alloy high-band-gap layer on said III-V composite semiconductor alloy well layer, and
wherein said active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
2. The device of claim 1 , wherein said electronic-photonic device is configured as a buried hetero-structure laser.
3. The device of claim 1 , wherein said first inner III-V composite semiconductor alloy high-band-gap layer includes an InGaAsP alloy.
4. The device of claim 1 , wherein said III-V composite semiconductor alloy well layer includes an InAs alloy.
5. The device of claim 1 , wherein said III-V composite semiconductor alloy well layer includes an In m As n alloy wherein a ratio m:n equals about 1:1.
6. The device of claim 1 , wherein said second outer III-V composite semiconductor alloy high-band-gap layer includes an InGaAsP alloy.
7. The device of claim 1 , wherein said spheroid-shaped quantum dots include concentric said said III-V composite semiconductor alloy well layers interleaved with said second outer III-V composite semiconductor alloy high-band-gap layers.
8. The device of claim 6 , wherein one of said said second outer III-V composite semiconductor alloy high-band-gap layers is an outer-most layer of each of said spheroid-shaped quantum dots.
9. The device of claim 1 , wherein said C-band telecommunications band is in a range of 1.55±0.02 microns.
10. The device of claim 1 , wherein said first inner and said second outer III-V composite semiconductor alloy high-band-gap layers are both composed of an InwGaxAsyPzz alloy wherein a ratio (w+x):(y+z) is in a range of about 19:1 to 21:1.
11. The device of claim 1 , wherein said active layer strip is located on an epitaxial III-V buffer layer.
12. The device of claim 11 , further including an InP alloy insulating layer located on said epitaxial III-V buffer layer.
13. The device of claim 12 , wherein said InP alloy insulating layer includes consecutive layers of a Zn-doped InP alloy layer, a Si-doped InP alloy layer, a Fe-doped InP alloy layer and a Si-doped InP alloy layer.
14. The device of claim 11 , wherein said epitaxial III-V buffer layer is located on a substrate.
15. The device of claim 14 , wherein said epitaxial III-V buffer layer is located on a surface of said substrate having a (100) crystallographic plane.
16. The device of claim 11 , wherein said epitaxial III-V buffer layer is located on a substrate composed of a crystalline InP alloy.
17. The device of claim 1 , further including a Zn-doped InP alloy III-V capping layer located on said active strip layer.
18. The device of claim 17 , further including a second capping layer of Zn-doped InP alloy located on said Zn-doped InP alloy III-V capping layer and on an InP alloy insulating layer.
19. The device of claim 2 , wherein said buried hetero-structure laser has a laser threshold of about 800 mAmp.
20. The device of claim 2 , wherein said buried hetero-structure laser produces about 2 mW or more of optical power at an injection current of about 900 mAmp.