Method of manufacturing quantum dot

1. A method of manufacturing a quantum dot, the method comprising:

mixing a Group II precursor and a Group III precursor in a solvent to prepare a first mixture;

heating the first mixture at a temperature of about 200° C. to about 350° C.;

adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and

maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form the quantum dot.

2. The method of claim 1 , wherein a Group II element of the Group II precursor is at least one selected from the group consisting of zinc, cadmium, and mercury.

3. The method of claim 2 , wherein the Group II precursor comprises at least one selected from the group consisting of dimethyl zinc, diethyl zinc, zinc carboxylate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, dimethyl cadmium, diethyl cadmium, cadmium oxide, cadmium carbonate, cadmium acetate dihydrate, cadmium acetylacetonate, cadmium fluoride, cadmium chloride, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, cadmium nitrate, cadmium sulfate, cadmium carboxylate, mercury iodide, mercury bromide, mercury fluoride, mercury cyanide, mercury nitrate, mercury perchlorate, mercury sulfate, mercury oxide, mercury carbonate, and mercury carboxylate.

4. The method of claim 1 , wherein a Group III element of the Group III precursor is at least one selected from the group consisting of aluminum, gallium, indium, and thallium.

5. The method of claim 4 , wherein the Group III precursor comprises at least one selected from the group consisting of aluminum phosphate, aluminum acetylacetonate, aluminum chloride, aluminum fluoride, aluminum oxide, aluminum nitrate, aluminum sulfate, gallium acetylacetonate, gallium chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium chloride, indium oxide, indium nitrate, indium sulfate, and indium carboxylate.

6. The method of claim 1 , wherein a Group V element of the Group V precursor is at least one selected from the group consisting of nitrogen, phosphorus, and arsenic.

7. The method of claim 6 , wherein the Group V precursor comprises at least one selected from the group consisting of an alkyl phosphine, a tris(trialkylsilyl phosphine), a tris(dialkylamino phosphine), a tris(dialkylamino) phosphine, arsenic oxide, arsenic chloride, arsenic sulfate, arsenic bromide, arsenic iodide, nitric oxide, nitric acid, and ammonium nitrate.

8. The method of claim 7 , wherein the alkyl phosphine comprises at least one selected from the group consisting of triethyl phosphine, tributyl phosphine, trioctyl phosphine, triphenyl phosphine, and tricyclohexyl phosphine.

9. The method of claim 1 , wherein a Group VI element of the Group VI precursor is at least one selected from the group consisting of sulfur, selenium, and tellurium.

10. The method of claim 9 , wherein the Group VI precursor comprises at least one selected from the group consisting of sulfur, an alkylthiol, a trialkylphosphine sulfide, a trialkenylphosphine sulfide, an alkylamino sulfide, an alkenylamino sulfide, a trialkylphosphine selenide, a trialkenylphosphine selenide, an alkylamino selenide, an alkenylamino selenide, a trialkylphosphine telluride, a trialkenylphosphine telluride, an alkylamino telluride, and an alkenylamino telluride.

11. The method of claim 1 , wherein the Group II precursor comprises zinc oleate, and the Group VI precursor comprises trioctyl phosphine sulfide or tributyl phosphine sulfide.

12. The method of claim 1 , wherein the Group V precursor solution and the Group VI precursor solution are simultaneously injected into the first mixture.

13. The method of claim 12 , wherein the Group V precursor solution and the Group VI precursor solution are injected under an inert gas atmosphere or an air atmosphere.

14. The method of claim 13 , wherein the quantum dot comprises a core and a shell.

15. The method of claim 14 , wherein the core and the shell are each independently formed under the inert gas atmosphere or the air atmosphere.

16. The method of claim 14 , wherein the shell comprises at least one selected from the group consisting of a group II-VI compound and a group II-III-VI compound.

17. The method of claim 16 , wherein the shell comprises ZnS or InZnS.