Light emitting device, light emitting device package and lighting system
Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, and a second conductive semiconductor layer over the active layer; a dielectric layer over a first region of the first conductive semiconductor layer; a second electrode over the dielectric layer; and a first electrode over a second region of the first conductive semiconductor layer.
1. A light emitting device comprising:
a light emitting structure having a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
a dielectric layer in a first area of the first conductive type semiconductor layer;
a second electrode on the dielectric layer;
a first electrode in a second area of the first conductive type semiconductor layer;
a conductive substrate on the second conductive type semiconductor layer;
wherein the second electrode and the conductive substrate are electrically connected to each other.
2. The light emitting device according to the claim 1 , wherein the first electrode and the second electrode are not electrically connected to each other.
3. The light emitting device according to the claim 1 , wherein a current passes through the active layer to generate light in constant voltage, and a electrostatic passes through the dielectric layer in electrostatic discharge.
4. A light emitting device comprising:
a light emitting structure having a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
a capacitor in a first area of the light emitting structure, wherein the capacitor comprises a dielectric layer in a first area of the first conductive type semiconductor layer and a second electrode on the dielectric layer;
a first electrode in a second area of the first conductive type semiconductor layer;
a conductive substrate on the second conductive type semiconductor layer;
wherein the second electrode and the conductive substrate are electrically connected to each other.
5. The light emitting device according to the claim 4 , wherein the first electrode and the second electrode are not electrically connected to each other.
6. The light emitting device according to the claim 4 , wherein a current passes through the active layer to generate light in constant voltage, and a high frequency passes through the capacitor in electrostatic discharge.