Solid-state imaging device, manufacturing method thereof, camera, and electronic device

1. A solid-state imaging device comprising: a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel arranged on a light sensing surface of a semiconductor substrate in the form of a matrix; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function that is larger than the transfer gate electrode; wherein an inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode; wherein the inversion layer induction electrode is integrally formed with an adjacent inversion layer induction electrode; and wherein the adjacent inversion layer induction electrode is formed in an area covering a portion or the whole of an adjacent photodiode.

2. The solid-state imaging device according to claim 1 , wherein the inversion layer induction electrode is composed of a second conductivity type semiconductor.

3. The solid-state imaging device according to claim 1 , wherein a negative voltage is applied to the inversion layer induction electrode.

4. The solid-state imaging device according to claim 1 , wherein a concave portion for exposing the side surface of the semiconductor area is formed on the semiconductor substrate in an element isolation area that divides the photodiode for each pixel, the inversion layer induction electrode is formed on the side surface via the gate insulating layer, and the inversion layer is induced from the side surface of the semiconductor area.

5. The solid-state imaging device according to claim 1 , wherein a concave portion is formed on the semiconductor substrate in a lower portion of the transfer gate electrode, and the transfer gate electrode is formed to be filled via the gate insulating layer inside the concave portion.

6. The solid-state imaging device according to claim 1 , wherein an effective concentration of first conductivity type impurities in the semiconductor area becomes higher as being closer to the surface of the semiconductor substrate.

7. The solid-state imaging device according to claim 1 , wherein the adjacent inversion layer induction electrode is composed of the conductor or the semiconductor having the work function that is larger than the transfer gate electrode.

8. A camera comprising: a solid-state imaging device formed by integrating a plurality of pixels on a light sensing surface; an optical system guiding an incident light to an imaging unit of the solid-state imaging device; and a signal processing circuit processing an output signal of the solid-state imaging device; wherein the solid-state imaging device includes: a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel arranged on a light sensing surface of a semiconductor substrate in the form of a matrix; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function that is larger than the transfer gate electrode; wherein an inversion layer is induced, which is induced by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode; wherein the inversion layer induction electrode is integrally formed with an adjacent inversion layer induction electrode; and wherein the adjacent inversion layer induction electrode is formed in an area covering a portion or the whole of an adjacent photodiode.