Interconnection architectures for multilayer crossbar circuits

1. An interconnection architecture for multilayer crossbar circuits comprises:

metal-insulator transition channels interposed between address leads and each bar in a multilayer crossbar circuit; and

an extrinsic variable transducer that selectively transitions the metal-insulator transition channels between insulating and conducting states to selectively connect and disconnect the bars and the address leads, in which the extrinsic variable transducer comprises a layer select device that connects at least a portion of the bars in a selected layer to addressing circuitry, wherein the extrinsic variable transducer is either an electrical heater or a pressure transducer.

2. The architecture of claim 1 , in which the extrinsic variable transducer converts an electrical signal from a gate electrode into a change in an extrinsic variable, the extrinsic variable changing the state of the metal-insulator channels between insulating and conducting states.

3. The architecture of claim 1 , in which a single extrinsic variable transducer is a layer selected device which connects all the bars in a selected layer to addressing circuitry.

4. The architecture of claim 1 , further comprising addressing circuitry is distributed in multiple crossbar layers which overlie a base layer.

5. The architecture of claim 4 , in which the addressing circuitry is formed from complementary pairs of vias which connect to metal insulating transition devices configured as logic circuitry.

6. The architecture of claim 4 , in which the architecture further comprises:

a first group of vias which address north/south bars;

a second group of vias which address east/west bars; and

a third group of vias which address layers within the multilayer crossbar circuit.

7. The architecture of claim 1 , in which the metal-insulator transition material is crystalline vanadium oxide which has a metal insulator transition temperature between approximately 60° C. and 70° C.

8. The architecture of claim 1 , in which the metal-insulator transition channels are formed along the periphery of each layer, a single extrinsic variable transducer being actuated to transition all the metal-insulator transition channels in that layer from an insulating to a conducting state and vice versa.

9. An interconnection architecture for multilayer circuits comprising:

an array of vias;

a CMOS layer configured to selectively access the array of vias according to an address;

a crossbar stack comprising layers of intersecting bars with programmable crosspoint devices interposed between intersecting bars;

electrically controlled switches comprising metal insulator channels interposed between address leads and bars in the multilayer circuit; and

an extrinsic variable transducer that selectively transitions the metal-insulator channels between insulating and conducting states, the extrinsic variable transducer comprising a layer select device that connects at least a portion of the bars in a selected layer to addressing circuitry through the array of vias, wherein the extrinsic variable transducer is either an electrical heater or a pressure transducer.

10. The architecture of claim 9 , in which the metal-insulator channels comprise memristors interposed between address leads and bars in the multilayer circuit.

11. A method for accessing a programmable crosspoint device within a multilayer crossbar circuit, the method comprising:

activating first and second address leads in each layer of the multilayer crossbar circuit;

activating an extrinsic variable transducer in one layer, the extrinsic variable transducer altering the state of metal insulator transition channels interposed between address leads and crossbar segments in that layer such that electrical signals from the first and second address leads are conducted to a first crossbar segment and an intersecting second crossbar segment, a programmable crosspoint device being interposed between the first crossbar segment and second crossbar segment, wherein the extrinsic variable transducer is either an electrical heater or a pressure transducer.

12. An interconnection architecture for multilayer crossbar circuits comprises:

metal-insulator transition channels interposed between address leads and each bar in a multilayer crossbar circuit; and

an extrinsic variable transducer that selectively transitions the metal-insulator transition channels between insulating and conducting states to selectively connect and disconnect the bars and the address leads, in which the extrinsic variable transducer comprises a layer select device that connects at least a portion of the bars in a selected layer to addressing circuitry,

wherein the metal-insulator transition channels are formed along the periphery of each layer, a single extrinsic variable transducer being actuated to transition all the metal-insulator transition channels in that layer from an insulating to a conducting state and vice versa.

13. The architecture of claim 12 , in which the extrinsic variable transducer converts an electrical signal from a gate electrode into a change in an extrinsic variable, the extrinsic variable changing the state of the metal-insulator channels between insulating and conducting states.

14. The architecture of claim 12 , in which the extrinsic variable transducer is an electrical heater.

15. The architecture of claim 12 , in which the extrinsic variable transducer is a pressure transducer.

16. The architecture of claim 12 , in which a single extrinsic variable transducer is a layer selected device which connects all the bars in a selected layer to addressing circuitry.

17. The architecture of claim 12 , further comprising addressing circuitry is distributed in multiple crossbar layers which overlie a base layer.

18. The architecture of claim 17 , in which the addressing circuitry is formed from complementary pairs of vias which connect to metal insulating transition devices configured as logic circuitry.

19. The architecture of claim 17 , in which the architecture further comprises:

a first group of vias which address north/south bars;

a second group of vias which address east/west bars; and

a third group of vias which address layers within the multilayer crossbar circuit.

20. The architecture of claim 12 , in which the metal-insulator transition material is crystalline vanadium oxide which has a metal insulator transition temperature between approximately 60° C. and 70° C.