Substrate having laser sintered underplate
View Patent ↗A substrate includes a metal portion and an underplate that is laser sintered to the metal portion. The metal portion has a melting point that is lower than a sintering temperature of the underplate.
1. A substrate comprising:
a metal portion; and
a metallic underplate of nickel metal that is laser sintered to the metal portion such that the metallic underplate has a sintered interface with the metal portion, the sintered interface having a microstructure that is characteristic of being laser-applied and does not crack, blister or delaminate at a processing temperature greater than 350° C., wherein the metal portion has a melting point that is lower than a sintering temperature of the metallic underplate.
2. The substrate as recited in claim 1 , wherein the metal portion is aluminum.
3. The substrate as recited in claim 1 , wherein the metal portion is a metal matrix of a composite.
4. The substrate as recited in claim 3 , wherein the composite comprises silicon carbide.
5. The substrate as recited in claim 1 , wherein the metal portion is aluminum and the metallic underplate is a nickel metal layer in continuous contact with the metal portion.
6. An electronic device comprising:
an electronic device package having a metallic layer thereon such that there is a metallic layer/package interface, the metallic layer selected from a group consisting of nickel metal and copper metal, and the metallic layer/package interface is laser sintered such that the metallic layer has a sintered interface with the electronic device package, the sintered interface having a microstructure that is characteristic of being laser-applied and does not crack, blister or delaminate at a processing temperature greater than 350° C.
7. The electronic device as recited in claim 6 , further comprising a silicon-containing die and a bonding material on the metallic layer which bonds the electronic device package and the silicon-containing die together, wherein the electronic device package is an aluminum silicon carbide (AlSiC) package.
8. The electronic device as recited in claim 7 wherein the silicon-containing die includes a titanium metal layer and a nickel metal layer.
9. The electronic device as recited in claim 6 , wherein the metallic layer is copper metal.
10. The electronic device as recited in claim 6 , wherein the metallic layer is nickel metal.
11. The electronic device as recited in claim 6 , wherein the electronic device package is a metal matrix composite having silicon carbide reinforcement dispersed in an aluminum metal matrix.
12. electronic device as recited in claim 6 , wherein the metallic layer is a nickel metal layer in continuous contact with the electronic device package.
13. An electronic device comprising:
a silicon-containing die;
an aluminum silicon carbide (AlSiC) package including a nickel metal layer thereon having a sintered interface with the AlSiC package, the sintered interface having a microstructure that is characteristic of being laser-applied and does not crack, blister or delaminate at a processing temperature greater than 350° C.; and
a bonding material that bonds the nickel metal layer on the AlSiC package and the silicon-containing die together.
14. The electronic device as recited in claim 13 , wherein the nickel metal layer is in continuous contact with the AlSiC package.
15. A bonded structure comprising:
a structural member including aluminum metal;
a metallic layer on the structural member, the metallic layer having a sintered interface with the structural member, the sintered interface having a microstructure that is characteristic of being laser-applied and does not crack, blister or delaminate at a processing temperature greater than 350° C., and the metallic layer is selected from a group consisting of nickel metal and copper metal; and
a bonding material on the metallic layer operable to bond the structural member and another component together.
16. The bonded structure as recited in claim 15 , wherein the metallic layer is the nickel metal.
17. The bonded structure as recited in claim 14 , wherein the bonding material comprises gold and tin.
18. The bonded structure as recited in claim 15 , wherein the metallic layer is the nickel metal and is in continuous contact with the structural member.