Methods of fabricating a polycrystalline diamond compact
View Patent ↗Embodiments relate to PDCs, methods of fabricating PDCs, and applications for such PDCs. In an embodiment, a PDC includes a substrate and a pre-sintered PCD table including an interfacial surface that is bonded to the substrate. The pre-sintered PCD table may be substantially free of leaching by-products in a region at least proximate to the interfacial surface. In an embodiment, a method of fabricating a PDC includes providing an at least partially leached PCD including an interfacial surface. The method includes removing at least some leaching by-products from the at least partially leached PCD table. After removing the at least some leaching by-products, the method includes bonding the interfacial surface of the at least partially leached PCD table to a substrate to form a PDC.
1. A method of fabricating a polycrystalline diamond compact, comprising:
providing an at least partially leached polycrystalline diamond table including an interfacial surface;
reducing a non-planarity of the interfacial surface of the at least partially leached polycrystalline diamond table;
removing at least some leaching by-products from the at least partially leached polycrystalline diamond table; and
after removing the at least some leaching by-products and reducing the non-planarity of the interfacial surface, at least partially infiltrating the at least partially leached polycrystalline diamond table with a metallic infiltrant to form a bond between the at least partially leached polycrystalline diamond table and a substrate.
2. The method of claim 1 wherein the act of reducing a non-planarity of the interfacial surface of the at least partially leached polycrystalline diamond table comprises substantially planarizing the interfacial surface to a flatness of about 0.00050 inch to about 0.0010 inch.
3. The method of claim 1 wherein the act of reducing a non-planarity of the interfacial surface of the at least partially leached polycrystalline diamond table occurs prior to removing the at least some leaching by-products from the at least partially leached polycrystalline diamond table.
4. The method of claim 1 wherein the act of reducing a non-planarity of the interfacial surface of the at least partially leached polycrystalline diamond table occurs after removing the at least some leaching by-products from the at least partially leached polycrystalline diamond table.
5. The method of claim 1 wherein the act of removing at least some leaching by-products from the at least partially leached polycrystalline diamond table comprises heating the at least partially leached polycrystalline diamond table under partial vacuum conditions.
6. The method of claim 5 wherein the act of heating the at least partially leached polycrystalline diamond table under partial vacuum conditions comprises heating the at least partially leached polycrystalline diamond table at a temperature sufficient to sublimate the at least some leaching by-products.
7. The method of claim 6 wherein the temperature is above about 500° C. and below about 700° C.
8. The method of claim 1 wherein the act of removing at least some leaching by-products from the at least partially leached polycrystalline diamond table comprises chemically cleaning the at least partially leached polycrystalline diamond table.
9. The method of claim 1 wherein the at least some leaching by-products comprise at least one member selected from the group consisting of an oxide and a salt.
10. The method of claim 1 , further comprising leaching a portion of the metallic infiltrant present in the infiltrated polycrystalline diamond table to a selected leach depth.
11. The method of claim 10 wherein the selected leach depth is about 50 μm to about 500 μm.
12. The method of claim 1 wherein the metallic infiltrant comprises cobalt, nickel, iron, or alloys thereof.
13. The method of claim 1 wherein the metallic infiltrant is provided from the substrate.
14. The method of claim 10 , further comprising removing at least some leaching by-products generated during the leaching the portion of the metallic infiltrant.
15. The method of claim 1 , further comprising incorporating the polycrystalline diamond compact in a bearing assembly as a bearing element.
16. The method of claim 10 , further comprising incorporating the leached polycrystalline diamond compact in a bearing assembly as a bearing element.
17. The method of claim 1 , further comprising attaching the polycrystalline diamond compact to a bit body of a rotary drill bit.
18. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table in the presence of a catalyst;
leaching the catalyst from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table;
reducing a non-planarity of an interfacial surface of the at least partially leached polycrystalline diamond table;
removing at least some leaching by-products from the at least partially leached polycrystalline diamond table; and
after removing the at least some leaching by-products and reducing the non-planarity of the interfacial surface, at least partially infiltrating the at least partially leached polycrystalline diamond table with a metallic infiltrant to form a bond between the at least partially leached polycrystalline diamond table and a substrate.
19. The method of claim 18 wherein the act of reducing a non-planarity of an interfacial surface of the at least partially leached polycrystalline diamond table occurs prior to or after removing the at least some leaching by-products from the at least partially leached polycrystalline diamond table.
20. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table in the presence of a catalyst;
leaching the catalyst from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table;
removing a product from the at least partially leached polycrystalline diamond table that is disposed in the at least partially leached polycrystalline diamond table during the act of leaching;
reducing a non-planarity of an interfacial surface of the at least partially leached polycrystalline diamond table; and
after removing the product and reducing the non-planarity of the interfacial surface, at least partially infiltrating the at least partially leached polycrystalline diamond table with a metallic infiltrant to form a bond between the at least partially leached polycrystalline diamond table and a substrate.
21. The method of claim 20 wherein the act of removing a product from the at least partially leached polycrystalline diamond table that is disposed in the at least partially leached polycrystalline diamond table during the act of leaching comprises removing a leaching by-product.
22. The method of claim 21 wherein the leaching by-product comprises at least one member selected from the group consisting of an oxide and a salt.
23. The method of claim 20 wherein the act of removing a product from the at least partially leached polycrystalline diamond table that is disposed in the at least partially leached polycrystalline diamond table during the act of leaching comprises removing a leaching acid.
24. The method of claim 20 wherein the act of removing a product from the at least partially leached polycrystalline diamond table that is disposed in the at least partially leached polycrystalline diamond table during the act of leaching comprises heating the at least partially leached polycrystalline diamond table under partial vacuum conditions.
25. The method of claim 24 wherein the act of heating the at least partially leached polycrystalline diamond table under partial vacuum conditions comprises heating the at least partially leached polycrystalline diamond table at a temperature sufficient to sublimate at least some leaching by-products generated during the act of leaching.
26. The method of claim 20 wherein the act of removing a product from the at least partially leached polycrystalline diamond table generated during the act of leaching comprises chemically cleaning the at least partially leached polycrystalline diamond table.
27. The method of claim 20 , further comprising leaching a portion of the metallic infiltrant present in the infiltrated polycrystalline diamond table to a selected leach depth.
28. The method of claim 27 wherein the selected leach depth is about 50 μm to about 500 μm.
29. The method of claim 20 wherein the metallic infiltrant comprises cobalt, nickel, iron, or alloys thereof.