Solar cell and method for manufacturing the same
View Patent ↗A solar cell includes a semiconductor layer which includes a p-type impurity containing layer and an n-type impurity-containing layer; a dielectric layer disposed on one side of the semiconductor layer, wherein the dielectric layer has an isotropically etched portion on the surface thereof; a first electrode electrically connected with the p-type impurity-containing layer in the semiconductor layer; and a second electrode electrically connected with the n-type impurity-containing layer in the semiconductor layer.
1. A method for manufacturing a solar cell, the method comprising:
providing a semiconductor layer including a p-type impurity-containing layer and an n-type impurity-containing layer;
disposing a dielectric layer on a front side of the semiconductor layer;
disposing a photosensitive pattern on the dielectric layer;
isotropically etching a surface of the dielectric layer using the photosensitive pattern;
a first electrode electrically connected with the p-type impurity-containing layer; and
a second electrode electrically connected with the n-type impurity-containing layer.
2. The method of claim 1 , wherein isotropic etching of the surface of the dielectric layer is performed by a wet method using an acid-containing solution.
3. The method of claim 2 , wherein the isotropically etched surface of the dielectric layer includes a plurality of concave lens shapes.
4. The method of claim 2 , wherein the isotropically etched surface of the dielectric layer has a pitch of at least about 0.5 μm.
5. The method of claim 4 , wherein the isotropically etched surface of the dielectric layer has a pitch of about 0.5 μm to about 2 μm.
6. The method of claim 1 , wherein the dielectric layer has a lower refractive index than a refractive index of the semiconductor layer.
7. The method of claim 1 , wherein the dielectric layer has a refractive index of about 1.1 to about 2.2, and the semiconductor layer has a refractive index of about 3.4 to about 4.4.
8. The method of claim 1 , wherein the dielectric layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and a combination thereof.