DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A display substrate includes a gate line disposed on a substrate, a data line crossing the gate line, a thin-film transistor electrically connected to the gate line and the data line, a light blocking layer disposed on the substrate and the thin-film transistor, where the light blocking layer blocks light and includes at least one selected from the group consisting of a zinc oxide, a copper oxide and a zinc-copper-oxide composite, and a pixel electrode electrically connected to the thin-film transistor.
1 . A display substrate comprising:
a gate line disposed on a substrate;
a data line crossing the gate line;
a thin-film transistor electrically connected to the gate line and the data line;
a light blocking layer disposed on the substrate and the thin-film transistor, wherein the light blocking layer blocks light and comprises at least one selected from the group consisting of a zinc oxide, a copper oxide and a zinc-copper-oxide composite; and
a pixel electrode electrically connected to the thin-film transistor.
2 . The display substrate of claim 1 , wherein a thickness of the light blocking layer is in a range of about 1,000 Å to about 1,200 Å.
3 . The display substrate of claim 1 , wherein the zinc oxide absorbs light in a wavelength range of about 100 nm to about 370 nm.
4 . The display substrate of claim 1 , wherein the copper oxide absorbs light in a wavelength range of about 380 nm to about 770 nm.
5 . A method of manufacturing a display substrate, the method comprising:
providing a thin-film transistor on a substrate, wherein the thin-film transistor is connected to a gate line and a data line crossing the gate line;
providing a light blocking layer on the substrate and the thin-film transistor, wherein the light blocking layer comprises at least one selected from the group consisting of a zinc oxide, a copper oxide and a zinc-copper-oxide composite; and
electrically connecting a pixel electrode to the thin-film transistor.
6 . The method of claim 5 , wherein providing the light blocking layer comprises:
forming a photo-curable layer including a photo-curable material mixed with a composite particle of a zinc oxide and a copper oxide on the substrate; and
patterning the photo-curable layer to form the light blocking layer on the thin-film transistor.
7 . The method of claim 6 , wherein the composite particle is formed by coating zinc oxide particles on a copper oxide particle, wherein the copper oxide particle is larger than the zinc oxide particles.
8 . The method of claim 6 , wherein the photo-curable material includes an acryl resin.
9 . The method of claim 5 , wherein providing the light blocking layer comprises:
depositing a zinc-copper-oxide composite on the substrate at a room temperature through a sputtering process; and
patterning the zinc-copper-oxide composite to form the light blocking layer on the thin-film transistor.
10 . The method of claim 9 , wherein providing the light blocking layer further comprises forming the zinc-copper-oxide composite, wherein forming the zinc-copper-oxide composite comprises:
mixing zinc oxide particles and copper oxide particles;
drying the zinc oxide particles and the copper oxide particles; and
sintering a mixture of the zinc oxide particles and the copper oxide particles.
11 . The method of claim 10 , wherein the zinc-copper-oxide composite includes a copper oxide and a zinc oxide in a weight ratio of about 1:1.5 to about 1:2.33.
12 . The method of claim 9 , wherein the deposited zinc-copper-oxide composite has an amorphous phase.
13 . The method of claim 5 , wherein the zinc oxide absorbs light in a wavelength range of about 100 nm to about 370 nm.
14 . The method of claim 5 , wherein the copper oxide absorbs light in a wavelength range of about 380 nm to about 770 nm.