Method for producing a doped organic semiconducting layer

1. A process for producing a doped organic semiconductive layer, comprising the steps of:

A) providing a matrix material;

B) providing a dopant complex wherein the dopant complex comprises a dopant and at least one ligand and wherein the dopant complex is selected from Cp 3 Sc, Cp 2 Ti(CO) 2 , Cp 2 Ti(acetylene derivatives), Cp 2 Zr(acetylene derivatives), Cp 2 Hf(acetylene derivatives), V(Cp) 2 , NbCp 4 , TaCp 4 , dibenzenechromium, cyclopentadienyl(triethylphosphine)copper (I), (OC) 4 Co—Pt(py) 2 -Co(CO) 4 , H 3 ReOs 3 (CO) 12 and HCoRu 2 (CO) 13 , Zn(methyl) 2 , Zn(ethyl) 2 , Cp 2 Mg, Cp 2 Ca, Cp 2 Sr, Cp 2 Ba, trimethylaluminum, triethylaluminum, trimethylgallium, triethylgallium, trimethylindium, triethylthallium, triphenylbismuth, cyclopentadienylthallium, SnCp 2 , PbCp 2 , Pb(ethyl, phenyl) 4 , Sn(ethyl, phenyl) 4 , arsine, stibine, bismuthine, tris(cyclopentadienyl)cerium, tris(cyclopentadienyl)erbium, tris(cyclopentadienyl)gadolinium, bis(cyclopentadienyl)dimethylhafnium, tris(cyclopentadienyl)lanthanum, tris(cyclopentadienyl)neodymium, tris(cyclopentadienyl)praseodymium, tris(cyclopentadienyl)samarium, tris(i-propylcyclopentadienyl)terbium, tris(cyclopentadienyl)thulium, or tris(cyclopentadienyl)ytterbium; and

C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition,

wherein, in process step C)

the dopant complex is decomposed to the dopant and at least one ligand, the dopant is a metal and/or metal cluster,

the dopant is intercalated into the matrix material; and wherein the mean free path length of the metal and/or metal cluster is greater than the apparatus dimensions.

2. The process as claimed in claim 1 , wherein, in process step C), the dopant complex is continuously evaporated and decomposed.

3. The process as claimed in claim 1 , wherein, in process step C), the dopant complex is decomposed by a method selected from thermal heating, electromagnetic irradiation, irradiation with radiofrequencies and microwave irradiation.

4. The process as claimed in claim 3 , wherein the decomposition of the dopant complex takes place in the gas phase.

5. The process as claimed in claim 1 , wherein the dopant n-dopes the matrix material.

6. A process for producing an optoelectronic device which comprises a substrate, a first electrode on the substrate, which in operation releases charge carriers of a first charge, a first charge transport layer which transports charge carriers of the first charge, at least one emission layer on the first charge transport layer, and a second electrode on the at least one emission layer, which in operation releases charge carriers of a second charge,

wherein the first charge transport layer has been produced by a process as claimed in claim 1 .

7. The process as claimed in claim 1 wherein the dopant complex is selected from the group consisting of Cp 3 Sc, Cp 2 Ti(CO) 2 , Cp 2 Ti(acetylene derivatives), Cp 2 Zr(acetylene derivatives), Cp 2 Hf(acetylene derivatives), V(C P ) 2 , NbCp 4 , TaCp 4 , dibenzenechromium, cyclopentadienyl(triethylphosphine)copper (I), (OC) 4 Co—Pt(py) 2 -Co(CO) 4 , H 3 ReOs 3 (CO) 12 and HCoRu 2 (CO) 13 , Zn(methyl) 2 , Zn(ethyl) 2 , Cp 2 Mg, Cp 2 Ca, Cp 2 Sr, Cp 2 Ba, cyclopentadienylthallium, SnCp 2 , PbCp 2 , Pb(ethyl, phenyl) 4 , Sn(ethyl, phenyl) 4 , tris(cyclopentadienyl)cerium, tris(cyclopentadienyl)erbium, tris(cyclopentadienyl)gadolinium, bis(cyclopentadienyl)dimethylhafnium, tris(cyclopentadienyl)lanthanum, tris(cyclopentadienyl)neodymium, tris(cyclopentadienyl)praseodymium, tris(cyclopentadienyl)samarium, tris(i-propylcyclopentadienyl)terbium, tris(cyclopentadienyl)thulium, and tris(cyclopentadienyl)ytterbium.